Issued Patents All Time
Showing 26–50 of 64 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10957775 | Assemblies having conductive structures with three or more different materials | David Ross Economy, Rita J. Klein, Jordan D. Greenlee, John Mark Meldrim, Brenda D. Kraus | 2021-03-23 |
| 10943921 | Methods of forming integrated assemblies | Jordan D. Greenlee, Chet E. Carter, Collin Howder, John Mark Meldrim | 2021-03-09 |
| 10923657 | Methods of forming memory cells and memory devices | Tsz W. Chan, Durai Vishak Nirmal Ramaswamy, Qian Tao, Yongjun Jeff Hu | 2021-02-16 |
| 10916564 | Assemblies having vertically-extending structures, and methods of forming assemblies having vertically-extending channel material pillars | David Ross Economy, John Mark Meldrim, Haoyu Li, Yongjun Jeff Hu, Christopher W. Petz +1 more | 2021-02-09 |
| 10840255 | Methods of filling openings with conductive material, and assemblies having vertically-stacked conductive structures | Jordan D. Greenlee, John Mark Meldrim | 2020-11-17 |
| 10777651 | Gate stacks | Yushi Hu, John Mark Meldrim, Eric Blomiley, Matthew J. King | 2020-09-15 |
| 10731273 | Source material for electronic device applications | John Mark Meldrim, Yushi Hu, Yongjun Jeff Hu | 2020-08-04 |
| 10720574 | Phase change memory stack with treated sidewalls | Tsz W. Chan, Yongjun Jeff Hu, Swapnil Lengade, Shu Qin | 2020-07-21 |
| 10700091 | Assemblies having vertically-extending structures, and methods of forming assemblies having vertically-extending channel material pillars | David Ross Economy, John Mark Meldrim, Haoyu Li, Yongjun Jeff Hu, Christopher W. Petz +1 more | 2020-06-30 |
| 10692572 | Variable resistance memory stack with treated sidewalls | Yongjun Jeff Hu, Tsz W. Chan, Christopher W. Petz | 2020-06-23 |
| 10573661 | Methods of filling horizontally-extending openings of integrated assemblies | Jordan D. Greenlee, Chet E. Carter, Collin Howder, John Mark Meldrim | 2020-02-25 |
| 10559579 | Assemblies having vertically-stacked conductive structures | Jordan D. Greenlee, John Mark Meldrim | 2020-02-11 |
| 10546895 | Phase change memory stack with treated sidewalls | Yongjun Jeff Hu, Tsz W. Chan, Swapnil Lengade, Shu Qin | 2020-01-28 |
| 10546848 | Integrated assemblies and methods of forming integrated assemblies | Daniel Billingsley, Christopher W. Petz, Haoyu Li, John Mark Meldrim, Yongjun Jeff Hu | 2020-01-28 |
| 10446727 | Ohmic contacts for semiconductor structures | Yongjun Jeff Hu, John Mark Meldrim, Shanming Mou | 2019-10-15 |
| 10418554 | Methods of forming memory cells and semiconductor devices | Tsz W. Chan, D. V. Nirmal Ramaswamy, Qian Tao, Yongjun Jeff Hu | 2019-09-17 |
| 10381072 | Phase change memory stack with treated sidewalls | Yongjun Jeff Hu, Tsz W. Chan, Christopher W. Petz | 2019-08-13 |
| 10361214 | Methods of filling openings with conductive material, and assemblies having vertically-stacked conductive structures | Jordan D. Greenlee, John Mark Meldrim | 2019-07-23 |
| 10355014 | Assemblies having vertically-extending structures | David Ross Economy, John Mark Meldrim, Haoyu Li, Yongjun Jeff Hu, Christopher W. Petz +1 more | 2019-07-16 |
| 10354989 | Integrated assemblies and methods of forming integrated assemblies | Daniel Billingsley, Christopher W. Petz, Haoyu Li, John Mark Meldrim, Yongjun Jeff Hu | 2019-07-16 |
| 10344398 | Source material for electronic device applications | John Mark Meldrim, Yushi Hu, Yongjun Jeff Hu | 2019-07-09 |
| 10325653 | Variable resistance memory stack with treated sidewalls | Yongjun Jeff Hu, Tsz W. Chan, Christopher W. Petz | 2019-06-18 |
| 10283524 | Methods of filling horizontally-extending openings of integrated assemblies | Jordan D. Greenlee, Chet E. Carter, Collin Howder, John Mark Meldrim | 2019-05-07 |
| 10224479 | Phase change memory stack with treated sidewalls | Tsz W. Chan, Yongjun Jeff Hu, Swapnil Lengade, Shu Qin | 2019-03-05 |
| 10193064 | Memory cells including dielectric materials, memory devices including the memory cells, and methods of forming same | Tsz W. Chan, D. V. Nirmal Ramaswamy, Qian Tao, Yongjun Jeff Hu | 2019-01-29 |