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Semiconductor devices including a layer of polycrystalline silicon having a smooth morphology |
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Method for forming a self-aligned isolation structure utilizing sidewall spacers as an etch mask and remaining as a portion of the isolation structure |
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Method for forming a self-aligned T-shaped isolation trench |
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Trench isolation for semiconductor devices |
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Integrated circuit formed by removing undesirable second oxide while minimally affecting a desirable first oxide |
John T. Moore |
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System for performing thermal reflow operations under high gravity conditions |
Karl M. Robinson |
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Epitaxial growth in a silicon-germanium semiconductor device with reduced contamination |
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Systems for performing thermal reflow operations under high gravity conditions |
Karl M. Robinson |
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Klaus Schuegraf |
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Method and apparatus for performing thermal reflow operations under high gravity conditions |
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| 6323101 |
Semiconductor processing methods, methods of forming silicon dioxide methods of forming trench isolation regions, and methods of forming interlevel dielectric layers |
Weimin Li, Trung T. Doan |
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Method and apparatus for performing thermal reflow operations under high gravity conditions |
Karl M. Robinson |
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Method for forming oxide using high pressure |
Randhir P. S. Thakur |
2001-08-07 |
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Trench isolation for semiconductor devices |
John T. Moore |
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| 6174761 |
Method and apparatus for performing thermal reflow operations under high gravity conditions |
Karl M. Robinson |
2001-01-16 |
| 6165853 |
Trench isolation method |
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Method for controlling the morphology of deposited silicon on a silicon dioxide substrate and semiconductor devices incorporating such deposited silicon |
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2000-11-07 |
| 6097076 |
Self-aligned isolation trench |
Fernando Gonzalez, Randhir P. S. Thakur |
2000-08-01 |
| 6096660 |
Method for removing undesirable second oxide while minimally affecting a desirable first oxide |
John T. Moore |
2000-08-01 |
| 6096998 |
Method and apparatus for performing thermal reflow operations under high gravity conditions |
Karl M. Robinson |
2000-08-01 |
| 6066576 |
Method for forming oxide using high pressure |
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2000-05-23 |
| 6051480 |
Trench isolation for semiconductor devices |
John T. Moore |
2000-04-18 |
| 5953621 |
Method for forming a self-aligned isolation trench |
Fernando Gonzalez, Randhir P. S. Thakur |
1999-09-14 |
| 5846888 |
Method for in-situ incorporation of desirable impurities into high pressure oxides |
Randhir P. S. Thakur |
1998-12-08 |
| 5711812 |
Apparatus for obtaining dose uniformity in plasma doping (PLAD) ion implantation processes |
Susan Felch, Michael William Kissick, Shamim M. Malik, Tienyu Sheng |
1998-01-27 |
