| 6919168 |
Masking methods and etching sequences for patterning electrodes of high density RAM capacitors |
Jeng H. Hwang, Steve S. Y. Mak, Chentsau Ying, John W. Schaller |
2005-07-19 |
| 6734452 |
Infrared radiation-detecting device |
Sarath D. Gunapala, John K. Liu, Jin Seo Park, Mani Sundaram |
2004-05-11 |
| 6211529 |
Infrared radiation-detecting device |
Sarath D. Gunapala, John K. Liu, Jin Seo Park, Mani Sundaram |
2001-04-03 |
| 6104060 |
Cost savings for manufacturing planar MOSFET devices achieved by implementing an improved device structure and fabrication process eliminating passivation layer and/or field plate |
Fwu-Iuan Hshieh |
2000-08-15 |
| 5986304 |
Punch-through prevention in trenched DMOS with poly-silicon layer covering trench corners |
Fwu-Iuan Hshieh, Koon Chong So |
1999-11-16 |
| 5923065 |
Power MOSFET device manufactured with simplified fabrication processes to achieve improved ruggedness and product cost savings |
Koon Chong So, Danny Chi Nim, Fwu-Iuan Hshieh, Yan Man Tsui |
1999-07-13 |
| 5907169 |
Self-aligned and process-adjusted high density power transistor with gate sidewalls provided with punch through prevention and reduced JFET resistance |
Fwu-Iuan Hshieh, Koon Chong So |
1999-05-25 |
| 5895951 |
MOSFET structure and fabrication process implemented by forming deep and narrow doping regions through doping trenches |
Koon Chong So, Yan Man Tsui, Fwu-Iuan Hshieh, Danny Chi Nim |
1999-04-20 |
| 5883416 |
Gate-contact structure to prevent contact metal penetration through gate layer without affecting breakdown voltage |
Koon Chong So, Fwu-Iuan Hshieh, Yan Man Tsui |
1999-03-16 |
| 5877529 |
Mosfet termination design and core cell configuration to increase breakdown voltage and to improve device ruggedness |
Koon Chong So, Danny Chi Nim, Fwu-Iuan Hshieh, Yan Man Tsui, Shu-Hui Cheng |
1999-03-02 |
| 5844277 |
Power MOSFETs and cell topology |
Fwu-Iuan Hshieh |
1998-12-01 |
| 5763915 |
DMOS transistors having trenched gate oxide |
Fwu-Juan Hshieh, Danny Chi Nim, Koon Chong So, Yan Man Tsui |
1998-06-09 |
| 5731611 |
MOSFET transistor cell manufactured with selectively implanted punch through prevent and threshold reductoin zones |
Fwu-Iuan Hshieh |
1998-03-24 |
| 5729037 |
MOSFET structure and fabrication process for decreasing threshold voltage |
Fwu-Iuan Hshieh, Yan Man Tsui, Danny Chi Nim, Koon Chong So |
1998-03-17 |
| 5668026 |
DMOS fabrication process implemented with reduced number of masks |
Fwu-Iuan Hshieh, Danny Chi Nim, Koon Chong So, Yan Man Tsui |
1997-09-16 |
| 5648297 |
Long-wavelength PTSI infrared detectors and method of fabrication thereof |
Jin Seo Park, Sarath D. Gunapala, Eric Jones, Hector Del Castillo |
1997-07-15 |
| 5075243 |
Fabrication of nanometer single crystal metallic CoSi.sub.2 structures on Si |
Kai-Wei Nieh, Robert W. Fathauer |
1991-12-24 |
| 5010037 |
Pinhole-free growth of epitaxial CoSi.sub.2 film on Si(111) |
Robert W. Fathauer, Paula J. Grunthaner |
1991-04-23 |
| 4990988 |
Laterally stacked Schottky diodes for infrared sensor applications |
— |
1991-02-05 |
