Issued Patents All Time
Showing 25 most recent of 31 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7094640 | Method of making a trench MOSFET device with improved on-resistance | Fwu-Iuan Hshieh, Koon Chong So, John Amato | 2006-08-22 |
| 7015125 | Trench MOSFET device with polycrystalline silicon source contact structure | Fwu-Iuan Hshieh, Koon Chong So, John Amato | 2006-03-21 |
| 6927094 | Method for assembling a semiconductor chip utilizing conducting bars rather than bonding wires | Max Chen, Ching-Lu Hsu, Kuang Hann Lin | 2005-08-09 |
| 6822288 | Trench MOSFET device with polycrystalline silicon source contact structure | Fwu-Iuan Hshieh, Koon Chong So, John Amato | 2004-11-23 |
| 6781196 | Trench DMOS transistor having improved trench structure | Koon Chong So, Fwu-Iuan Hshieh | 2004-08-24 |
| 6762098 | Trench DMOS transistor with embedded trench schottky rectifier | Fwu-Iuan Hshieh, Koon Chong So | 2004-07-13 |
| 6740951 | Two-mask trench schottky diode | Fwu-Iuan Hshieh, Koon Chong So | 2004-05-25 |
| 6713352 | Method of forming a trench MOSFET with structure having increased cell density and low gate charge | Fwu-Iuan Hshieh, Koon Chong So | 2004-03-30 |
| 6707127 | Trench schottky rectifier | Fwu-Iuan Hshieh, Max Chen, Koon Chong So | 2004-03-16 |
| 6657254 | Trench MOSFET device with improved on-resistance | Fwu-Iuan Hshieh, Koon Chong So, John Amato | 2003-12-02 |
| 6620691 | Semiconductor trench device with enhanced gate oxide integrity structure | Fwu-Iuan Hshieh, Koon Chong So | 2003-09-16 |
| 6593620 | Trench DMOS transistor with embedded trench schottky rectifier | Fwu-Iuan Hshieh, Koon Chong So | 2003-07-15 |
| 6576952 | Trench DMOS structure with peripheral trench with no source regions | Fwu-Iuan Hshieh, Koon Chong So | 2003-06-10 |
| 6576985 | Semiconductor device packaging assembly | Max Chen, Ching-Lu Hsu, Kuang Hann Lin | 2003-06-10 |
| 6555895 | Devices and methods for addressing optical edge effects in connection with etched trenches | Fwu-Iuan Hshieh, Koon Chong So | 2003-04-29 |
| 6548860 | DMOS transistor structure having improved performance | Fwu-Iuan Hshieh, Koon Chong So | 2003-04-15 |
| 6518152 | Method of forming a trench schottky rectifier | Fwu-Iuan Hshieh, Max Chen, Koon Chong So | 2003-02-11 |
| 6518127 | Trench DMOS transistor having a double gate structure | Fwu-Iuan Hshieh, Koon Chong So | 2003-02-11 |
| 6475884 | Devices and methods for addressing optical edge effects in connection with etched trenches | Fwu-Iuan Hshieh, Koon Chong So | 2002-11-05 |
| 6472708 | Trench MOSFET with structure having low gate charge | Fwu-Iuan Hshieh, Koon Chong So | 2002-10-29 |
| 6445037 | Trench DMOS transistor having lightly doped source structure | Fwu-Iuan Hshieh, Koon Chong So | 2002-09-03 |
| 6404025 | MOSFET power device manufactured with reduced number of masks by fabrication simplified processes | Fwu-Iuan Hshieh | 2002-06-11 |
| 6048759 | Gate/drain capacitance reduction for double gate-oxide DMOS without degrading avalanche breakdown | Fwu-Iuan Hshieh, Koon Chong So, Danny Chi Nim | 2000-04-11 |
| 5923065 | Power MOSFET device manufactured with simplified fabrication processes to achieve improved ruggedness and product cost savings | Koon Chong So, Danny Chi Nim, True-Lon Lin, Fwu-Iuan Hshieh | 1999-07-13 |
| 5895951 | MOSFET structure and fabrication process implemented by forming deep and narrow doping regions through doping trenches | Koon Chong So, Fwu-Iuan Hshieh, True-Lon Lin, Danny Chi Nim | 1999-04-20 |