Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
YT

Yan Man Tsui — 31 Patents

GSGeneral Semiconductor: 19 patents #4 of 38Top 15%
MEMegamos: 7 patents #5 of 9Top 60%
GTGeneral Semiconductor Of Taiwan: 2 patents #2 of 21Top 10%
MSMagepower Semiconductor: 2 patents #3 of 9Top 35%
Union City, CA: #41 of 1,177 inventorsTop 4%
California: #16,606 of 386,348 inventorsTop 5%
Overall (All Time): #115,823 of 4,157,543Top 3%
31 Patents All Time
Yan Man Tsui has been granted 31 US patents while listed as an inventor at General Semiconductor. The first was granted in 1997 and the most recent in August 2006. Yan Man Tsui ranks #115,823 of 4,157,543 US inventors in our database (top 2.8%). Patent records list Yan Man Tsui in Union City, CA, US.

Patents per Year

Patents granted per year, 1997 to 2006Bar chart with a peak of 9 patents in 2003.peak 91997: 1 patents19971998: 2 patents19981999: 5 patents19992000: 1 patents20002002: 4 patents20022003: 9 patents20032004: 6 patents20042005: 1 patents20052006: 2 patents2006

Issued Patents All Time

Showing 1–25 of 31 patents

Patent #TitleCo-InventorsDate
7094640 Method of making a trench MOSFET device with improved on-resistance Fwu-Iuan Hshieh, Koon Chong So, John Amato 2006-08-22
7015125 Trench MOSFET device with polycrystalline silicon source contact structure Fwu-Iuan Hshieh, Koon Chong So, John Amato 2006-03-21
6927094 Method for assembling a semiconductor chip utilizing conducting bars rather than bonding wires Max Chen, Ching-Lu Hsu, Kuang Hann Lin 2005-08-09
6822288 Trench MOSFET device with polycrystalline silicon source contact structure Fwu-Iuan Hshieh, Koon Chong So, John Amato 2004-11-23
6781196 Trench DMOS transistor having improved trench structure Koon Chong So, Fwu-Iuan Hshieh 2004-08-24
6762098 Trench DMOS transistor with embedded trench schottky rectifier Fwu-Iuan Hshieh, Koon Chong So 2004-07-13
6740951 Two-mask trench schottky diode Fwu-Iuan Hshieh, Koon Chong So 2004-05-25
6713352 Method of forming a trench MOSFET with structure having increased cell density and low gate charge Fwu-Iuan Hshieh, Koon Chong So 2004-03-30
6707127 Trench schottky rectifier Fwu-Iuan Hshieh, Max Chen, Koon Chong So 2004-03-16
6657254 Trench MOSFET device with improved on-resistance Fwu-Iuan Hshieh, Koon Chong So, John Amato 2003-12-02
6620691 Semiconductor trench device with enhanced gate oxide integrity structure Fwu-Iuan Hshieh, Koon Chong So 2003-09-16
6593620 Trench DMOS transistor with embedded trench schottky rectifier Fwu-Iuan Hshieh, Koon Chong So 2003-07-15
6576952 Trench DMOS structure with peripheral trench with no source regions Fwu-Iuan Hshieh, Koon Chong So 2003-06-10
6576985 Semiconductor device packaging assembly Max Chen, Ching-Lu Hsu, Kuang Hann Lin 2003-06-10
6555895 Devices and methods for addressing optical edge effects in connection with etched trenches Fwu-Iuan Hshieh, Koon Chong So 2003-04-29
6548860 DMOS transistor structure having improved performance Fwu-Iuan Hshieh, Koon Chong So 2003-04-15
6518152 Method of forming a trench schottky rectifier Fwu-Iuan Hshieh, Max Chen, Koon Chong So 2003-02-11
6518127 Trench DMOS transistor having a double gate structure Fwu-Iuan Hshieh, Koon Chong So 2003-02-11
6475884 Devices and methods for addressing optical edge effects in connection with etched trenches Fwu-Iuan Hshieh, Koon Chong So 2002-11-05
6472708 Trench MOSFET with structure having low gate charge Fwu-Iuan Hshieh, Koon Chong So 2002-10-29
6445037 Trench DMOS transistor having lightly doped source structure Fwu-Iuan Hshieh, Koon Chong So 2002-09-03
6404025 MOSFET power device manufactured with reduced number of masks by fabrication simplified processes Fwu-Iuan Hshieh 2002-06-11
6048759 Gate/drain capacitance reduction for double gate-oxide DMOS without degrading avalanche breakdown Fwu-Iuan Hshieh, Koon Chong So, Danny Chi Nim 2000-04-11
5923065 Power MOSFET device manufactured with simplified fabrication processes to achieve improved ruggedness and product cost savings Koon Chong So, Danny Chi Nim, True-Lon Lin, Fwu-Iuan Hshieh 1999-07-13
5895951 MOSFET structure and fabrication process implemented by forming deep and narrow doping regions through doping trenches Koon Chong So, Fwu-Iuan Hshieh, True-Lon Lin, Danny Chi Nim 1999-04-20