Issued Patents All Time
Showing 26–31 of 31 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5883416 | Gate-contact structure to prevent contact metal penetration through gate layer without affecting breakdown voltage | True-Lon Lin, Koon Chong So, Fwu-Iuan Hshieh | 1999-03-16 |
| 5883410 | Edge wrap-around protective extension for covering and protecting edges of thick oxide layer | Koon Chong So, Fwu-Iuan Hshieh, Danny Chi Nim | 1999-03-16 |
| 5877529 | Mosfet termination design and core cell configuration to increase breakdown voltage and to improve device ruggedness | Koon Chong So, Danny Chi Nim, Fwu-Iuan Hshieh, True-Lon Lin, Shu-Hui Cheng | 1999-03-02 |
| 5763915 | DMOS transistors having trenched gate oxide | Fwu-Juan Hshieh, True-Lon Lin, Danny Chi Nim, Koon Chong So | 1998-06-09 |
| 5729037 | MOSFET structure and fabrication process for decreasing threshold voltage | Fwu-Iuan Hshieh, True-Lon Lin, Danny Chi Nim, Koon Chong So | 1998-03-17 |
| 5668026 | DMOS fabrication process implemented with reduced number of masks | True-Lon Lin, Fwu-Iuan Hshieh, Danny Chi Nim, Koon Chong So | 1997-09-16 |