Issued Patents All Time
Showing 51–75 of 83 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9105841 | Forming magnetic microelectromechanical inductive components | Eugene J. O'Sullivan, Naigang Wang | 2015-08-11 |
| 8956975 | Electroless plated material formed directly on metal | Eugene J. O'Sullivan, Naigang Wang | 2015-02-17 |
| 8934289 | Multiple bit nonvolatile memory based on current induced domain wall motion in a nanowire magnetic tunnel junction | Anthony J. Annunziata, Michael C. Gaidis, Luc Thomas | 2015-01-13 |
| 8923039 | Multiple bit nonvolatile memory based on current induced domain wall motion in a nanowire magnetic tunnel junction | Anthony J. Annunziata, Michael C. Gaidis, Luc Thomas | 2014-12-30 |
| 8846529 | Electroless plating of cobalt alloys for on chip inductors | Eugene J. O'Sullivan, Naigang Wang | 2014-09-30 |
| 8755220 | Hybrid superconducting-magnetic memory cell and array | John F. Bulzacchelli, Mark B. Ketchen | 2014-06-17 |
| 8717136 | Inductor with laminated yoke | Robert E. Fontana, Jr., Philipp Herget, Eugene J. O'Sullivan, Lubomyr T. Romankiw, Naigang Wang +1 more | 2014-05-06 |
| 8638587 | Magnetic shift register memory device | John K. De Brosse, Yu Lu | 2014-01-28 |
| 8547732 | Hybrid superconducting-magnetic memory cell and array | John F. Bulzacchelli, Mark B. Ketchen | 2013-10-01 |
| 8537588 | Magnetic shift register memory device | John K. De Brosse, Yu Lu | 2013-09-17 |
| 8331139 | Increased magnetic damping for toggle MRAM | Daniel C. Worledge | 2012-12-11 |
| 8228706 | Magnetic shift register memory device | John K. DeBrosse, Yu Lu | 2012-07-24 |
| 8208288 | Hybrid superconducting-magnetic memory cell and array | John F. Bulzacchelli, Mark B. Ketchen | 2012-06-26 |
| 8102236 | Thin film inductor with integrated gaps | Robert E. Fontana, Jr., Philipp Herget, Bucknell C. Webb | 2012-01-24 |
| 7920416 | Increased magnetic damping for toggle MRAM | Daniel C. Worledge | 2011-04-05 |
| 7505308 | Systems involving spin-transfer magnetic random access memory | Solomon Assefa, Chung H. Lam, Jonathan Zanhong Sun | 2009-03-17 |
| 7506236 | Techniques for operating semiconductor devices | Daniel C. Worledge | 2009-03-17 |
| 7492631 | Methods involving resetting spin-torque magnetic random access memory | Solomon Assefa, Chung H. Lam, Jonathan Zanhong Sun | 2009-02-17 |
| 6590750 | Limiting magnetoresistive electrical interaction to a preferred portion of a magnetic region in magnetic devices | David W. Abraham, Philip Edward Batson, John Casimir Slonczewski, Philip L. Trouilloud, Stuart Stephen Papworth Parkin | 2003-07-08 |
| 6452764 | Limiting magnetoresistive electrical interaction to a preferred portion of a magnetic region in magnetic devices | David W. Abraham, Philip Edward Batson, Stuart Stephen Papworth Parkin, John Casimir Slonczewski, Philip L. Trouilloud | 2002-09-17 |
| 6392156 | High current conductors and high field magnets using anisotropic superconductors | Arthur Davidson, Timothy R. Dinger, Thomas K. Worthington | 2002-05-21 |
| 6368878 | Intentional asymmetry imposed during fabrication and/or access of magnetic tunnel junction devices | David W. Abraham, Philip L. Trouilloud | 2002-04-09 |
| 6226160 | Small area magnetic tunnel junction devices with low resistance and high magnetoresistance | Stuart Stephen Papworth Parkin | 2001-05-01 |
| 6104633 | Intentional asymmetry imposed during fabrication and/or access of magnetic tunnel junction devices | David W. Abraham, Philip L. Trouilloud | 2000-08-15 |
| 6072718 | Magnetic memory devices having multiple magnetic tunnel junctions therein | David W. Abraham, Philip L. Trouilloud | 2000-06-06 |