Issued Patents All Time
Showing 76–100 of 138 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11770936 | Stack of planar capacitors including capacitors with non-linear polar material and linear dielectric for common mode compensation in a memory bit-cell | Rajeev Kumar Dokania, Tanay Gosavi, Amrita Mathuriya, Sasikanth Manipatruni | 2023-09-26 |
| 11769790 | Rapid thermal annealing (RTA) methodologies for integration of perovskite-material based trench capacitors | Niloy Mukherjee, Somilkumar J. Rathi, Jason Y. Wu, Pratyush Pandey, Zeying Ren +8 more | 2023-09-26 |
| 11765909 | Process integration flow for embedded memory enabled by decoupling processing of a memory area from a non-memory area | Tanay Gosavi, Niloy Mukherjee, Rajeev Kumar Dokania, Amrita Mathuriya, Sasikanth Manipatruni | 2023-09-19 |
| 11765908 | Memory device fabrication through wafer bonding | Mauricio Manfrini, James David Clarkson, Abel Fernandez, Somilkumar J. Rathi, Niloy Mukherjee +4 more | 2023-09-19 |
| 11758708 | Stack of non-planar capacitors including capacitors with non-linear polar material and linear dielectric for common mode compensation in a memory bit-cell | Rajeev Kumar Dokania, Tanay Gosavi, Amrita Mathuriya, Sasikanth Manipatruni | 2023-09-12 |
| 11751403 | Common mode compensation for 2T1C non-linear polar material based memory bit-cell | Rajeev Kumar Dokania, Tanay Gosavi, Amrita Mathuriya, Sasikanth Manipatruni | 2023-09-05 |
| 11741428 | Iterative monetization of process development of non-linear polar material and devices | Sasikanth Manipatruni, Niloy Mukherjee, Tanay Gosavi, Somilkumar J. Rathi, James David Clarkson +3 more | 2023-08-29 |
| 11737283 | Method of forming a stack of non-planar capacitors including capacitors with non-linear polar material and linear dielectric for common mode compensation in a memory bit-cell | Rajeev Kumar Dokania, Tanay Gosavi, Amrita Mathuriya, Sasikanth Manipatruni | 2023-08-22 |
| 11729995 | Common mode compensation for non-linear polar material 1TnC memory bit-cell | Rajeev Kumar Dokania, Tanay Gosavi, Amrita Mathuriya, Sasikanth Manipatruni | 2023-08-15 |
| 11729991 | Common mode compensation for non-linear polar material based differential memory bit-cell | Rajeev Kumar Dokania, Tanay Gosavi, Amrita Mathuriya, Sasikanth Manipatruni | 2023-08-15 |
| 11709959 | Information processing apparatus and information processing method | Takuo Kanamitsu | 2023-07-25 |
| 11696450 | Common mode compensation for multi-element non-linear polar material based gain memory bit-cell | Rajeev Kumar Dokania, Tanay Gosavi, Amrita Mathuriya, Sasikanth Manipatruni | 2023-07-04 |
| 11696451 | Common mode compensation for non-linear polar material based 1T1C memory bit-cell | Rajeev Kumar Dokania, Tanay Gosavi, Amrita Mathuriya, Sasikanth Manipatruni | 2023-07-04 |
| 11683939 | Spin orbit memory devices with dual electrodes, and methods of fabrication | Benjamin Buford, Angeline Smith, Tanay Gosavi, Kaan Oguz, Christopher J. Wiegand +5 more | 2023-06-20 |
| 11681386 | Flexible decorative laminate sheet, module for touch panel, and touch panel | — | 2023-06-20 |
| 11630162 | Line verification device, and line verification method | Takaho Shibata, Tsuyoshi Nagai | 2023-04-18 |
| 11626451 | Magnetic memory device with ruthenium diffusion barrier | Emily Walker, Carl Naylor, Kaan Oguz, Kevin Lin, Tanay Gosavi +6 more | 2023-04-11 |
| 11605411 | Method of forming stacked ferroelectric planar capacitors in a memory bit-cell | Rajeev Kumar Dokania, Tanay Gosavi, Pratyush Pandey, Debo Olaosebikan, Amrita Mathuriya +1 more | 2023-03-14 |
| 11605592 | Method to fabricate metal and ferromagnetic metal multilayer interconnect line for skin effect suppression | Kevin Lin, Kevin P. O'Brien, Hui Jae Yoo | 2023-03-14 |
| 11594673 | Two terminal spin orbit memory devices and methods of fabrication | Angeline Smith, Tanay Gosavi, Sasikanth Manipatruni, Kaan Oguz, Kevin P. O'Brien +8 more | 2023-02-28 |
| 11557629 | Spin orbit memory devices with reduced magnetic moment and methods of fabrication | Kaan Oguz, Christopher J. Wiegand, Angeline Smith, Tanay Gosavi | 2023-01-17 |
| 11545204 | Non-linear polar material based memory bit-cell with multi-level storage by applying different voltage levels | Rajeev Kumar Dokania, Tanay Gosavi, Pratyush Pandey, Debo Olaosebikan, Amrita Mathuriya +1 more | 2023-01-03 |
| 11532635 | High-density low voltage multi-element ferroelectric gain memory bit-cell with pillar capacitors | Rajeev Kumar Dokania, Tanay Gosavi, Pratyush Pandey, Debo Olaosebikan, Amrita Mathuriya +1 more | 2022-12-20 |
| 11532342 | Non-linear polar material based differential multi-memory element bit-cell | Rajeev Kumar Dokania, Tanay Gosavi, Pratyush Pandey, Debo Olaosebikan, Amrita Mathuriya +1 more | 2022-12-20 |
| 11527278 | Non-linear polar material based memory bit-cell with multi-level storage by applying different time pulse widths | Rajeev Kumar Dokania, Tanay Gosavi, Pratyush Pandey, Debo Olaosebikan, Amrita Mathuriya +1 more | 2022-12-13 |