YF

Yoshiharu Fukasawa

KT Kabushiki Kaisha Toshiba: 10 patents #3,082 of 21,451Top 15%
TO Toshiba: 1 patents #1,121 of 2,688Top 45%
Overall (All Time): #470,682 of 4,157,543Top 15%
11
Patents All Time

Issued Patents All Time

Showing 1–11 of 11 patents

Patent #TitleCo-InventorsDate
7153589 Mo-W material for formation of wiring, Mo-W target and method for production thereof, and Mo-W wiring thin film Yasuo Kohsaka, Yoshiko Tsuji, Mitsushi Ikeda, Michio Sato, Toshihiro Maki 2006-12-26
6352628 Refractory metal silicide target, method of manufacturing the target, refractory metal silicide thin film, and semiconductor device Michio Sato, Takashi Yamanobe, Tohru Komatsu, Noriaki Yagi, Toshihiro Maki +1 more 2002-03-05
6309593 Refractory metal silicide target, method of manufacturing the target, refractory metal silicide thin film, and semiconductor device Michio Sato, Takashi Yamanobe, Tohru Komatsu, Noriaki Yagi, Toshihiro Maki +1 more 2001-10-30
6200694 Mo-W material for formation of wiring, Mo-W target and method for production thereof, and Mo-W wiring thin film Yasuo Kohsaka, Yoshiko Tsuji, Mitsushi Ikeda, Michio Sato, Toshihiro Maki 2001-03-13
5913100 Mo-W material for formation of wiring, Mo-W target and method for production thereof, and Mo-W wiring thin film Yasuo Kohsaka, Yoshiko Tsuji, Mitsushi Ikeda, Michio Sato, Toshihiro Maki 1999-06-15
5512155 Film forming apparatus 1996-04-30
5190630 Sputtering target Makoto Kikuchi, Hideo Ishihara 1993-03-02
4966676 Sputtering target Satoshi Yamaguchi, Hideo Ishihara 1990-10-30
4963240 Sputtering alloy target and method of producing an alloy film Mituo Kawai, Hideo Ishihara, Takenori Umeki, Yasuhisa Oana 1990-10-16
4842706 Sputtering target Mituo Kawai, Hideo Ishihara, Takashi Yamanobe 1989-06-27
4514234 Molybdenum board and process of manufacturing the same Tatsuhiko Matsumoto, Mituo Kawai, Shigeru Ueda, Hideo Koizumi, Hiroyuki Saitou 1985-04-30