Issued Patents All Time
Showing 26–32 of 32 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5148457 | System for analyzing metal impurity on the surface of a single crystal semiconductor by using total reflection of X-rays fluorescence | Atsuko Kubota, Norihiko Tsuchiya, Yoshiaki Matsushita, Mokuji Kageyama | 1992-09-15 |
| 5124276 | Filling contact hole with selectively deposited EPI and poly silicon | Yoshiaki Matsushita | 1992-06-23 |
| 5116780 | Method of manufacturing a semiconductor device having improved contact resistance characteristics | Yoshiaki Matsushita | 1992-05-26 |
| 5057899 | Semiconductor device with improved wiring contact portion | Yoshiaki Matsushita | 1991-10-15 |
| 5004702 | Preparation method of selective growth silicon layer doped with impurities | Yoshiaki Matsushita | 1991-04-02 |
| 4966866 | Method for manufacturing semiconductor device having gate electrodes of different conductivity types | Yuuichi Mikata | 1990-10-30 |
| 4579601 | Method of growing a resistive epitaxial layer on a short lifetime epi-layer | Yoshiaki Matsushita | 1986-04-01 |