HN

Hirotaka Nishino

KT Kabushiki Kaisha Toshiba: 17 patents #1,748 of 21,451Top 9%
Toshiba Memory: 2 patents #853 of 1,971Top 45%
📍 Yokohama, PA: #10 of 19 inventorsTop 55%
Overall (All Time): #236,825 of 4,157,543Top 6%
19
Patents All Time

Issued Patents All Time

Showing 1–19 of 19 patents

Patent #TitleCo-InventorsDate
11114531 Semiconductor device, method for manufacturing semiconductor device, inverter circuit, driving device, vehicle, and elevator Tatsuo Shimizu, Masayasu Miyata, Yoshihiko Moriyama, Yuichiro Mitani 2021-09-07
10397139 Storage device in which forwarding-function-equipped memory nodes are mutually connected and data processing method Kosuke Tatsumura, Atsuhiro Kinoshita, Masamichi Suzuki, Yoshifumi Nishi, Takao Marukame +1 more 2019-08-27
10249718 Semiconductor device, method for manufacturing semiconductor device, inverter circuit, driving device, vehicle, and elevator Tatsuo Shimizu, Masayasu Miyata, Yoshihiko Moriyama, Yuichiro Mitani 2019-04-02
10044642 Storage device in which forwarding-function-equipped memory nodes are mutually connected and data processing method Kosuke Tatsumura, Atsuhiro Kinoshita, Masamichi Suzuki, Yoshifumi Nishi, Takao Marukame +1 more 2018-08-07
9246709 Storage device in which forwarding-function-equipped memory nodes are mutually connected and data processing method Kosuke Tatsumura, Atsuhiro Kinoshita, Masamichi Suzuki, Yoshifumi Nishi, Takao Marukame +1 more 2016-01-26
9083423 Semiconductor circuit, D/A converter, mixer circuit, radio communication device, method for adjusting threshold voltage, and method for determining quality of transistor Masamichi Suzuki, Kazuya Matsuzawa, Izumi Hirano, Takao Marukame, Yusuke Higashi +3 more 2015-07-14
8450208 Semiconductor device manufacturing method Yoshifumi Nishi, Atsuhiro Kinoshita, Masamichi Suzuki 2013-05-28
7968933 Nonvolatile semiconductor memory device Shoko Kikuchi, Naoki Yasuda, Koichi Muraoka, Yukie Nishikawa 2011-06-28
7863695 Complementary MISFET semiconductor device having an atomic density ratio aluminum/lanthanum (Al/La) in the gate insulating layer of PMIS is larger than that of the NMIS Masamichi Suzuki, Masato Koyama, Yoshinori Tsuchiya, Reika Ichihara, Akira Takashima 2011-01-04
7767538 Method for manufacturing semiconductor device Koichi Kato 2010-08-03
7550801 Nonvolatile semiconductor memory device Shoko Kikuchi, Naoki Yasuda, Koichi Muraoka, Yukie Nishikawa 2009-06-23
6933216 Fine particle film forming apparatus and method and semiconductor device and manufacturing method for the same Atsuko Sakata, Keiichi Sasaki, Nobuo Hayasaka, Katsuya Okumura 2005-08-23
6538323 Semiconductor device having an electrode structure comprising a conductive fine particle film Atsuko Sakata, Keiichi Sasaki, Nobuo Hayasaka, Katsuya Okumura 2003-03-25
6342421 Semiconductor device and manufacturing method thereof Yuichiro Mitani, Ichiro Mizushima, Shigeru Kambayashi, Masahiro Kashiwagi 2002-01-29
6140247 Semiconductor device manufacturing method Kouichi Muraoka, Iwao Kunishima 2000-10-31
6054371 Method of manufacturing a semiconductor device by detachably mounting substrates to a holder board Masakatsu Tsuchiaki, Yasushi Nakasaki, Akira Nishiyama, Yukihito Oowaki 2000-04-25
5864161 Semiconductor device and manufacturing method thereof Yuichiro Mitani, Ichiro Mizushima, Shigeru Kambayashi, Masahiro Kashiwagi 1999-01-26
5258332 Method of manufacturing semiconductor devices including rounding of corner portions by etching Keiji Horioka, Haruo Okano 1993-11-02
5030319 Method of oxide etching with condensed plasma reaction product Nobuo Hayasaka, Haruo Okano 1991-07-09