Issued Patents All Time
Showing 1–25 of 27 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9093504 | Semiconductor device manufacturing method and semiconductor device | — | 2015-07-28 |
| 7939869 | Semiconductor device having a magnetization configuration of source and drain ferromagnetic electrodes and method of manufacturing the same | Yoshiaki Saito | 2011-05-10 |
| 7919813 | Method of manufacturing semiconductor device and semiconductor device | — | 2011-04-05 |
| 7786538 | Semiconductor device having a nickel silicide layer on a single crystal silicon layer | — | 2010-08-31 |
| 7755114 | Semiconductor device and manufacturing method thereof | — | 2010-07-13 |
| 7732875 | Semiconductor device fabrication method and semiconductor device fabricated thereby | — | 2010-06-08 |
| 7701017 | MOS semiconductor device and method of fabricating the same | — | 2010-04-20 |
| 7696575 | Semiconductor device and method of manufacture thereof | — | 2010-04-13 |
| 7678652 | MOSFET-type semiconductor device, and method of manufacturing the same | — | 2010-03-16 |
| 7622774 | Method of manufacturing semiconductor device and semiconductor device | — | 2009-11-24 |
| 7420230 | MOSFET-type semiconductor device, and method of manufacturing the same | — | 2008-09-02 |
| 7378344 | Method of manufacturing a semiconductor device including a silicide layer having an NiSi phase provided on source and drain regions | Shoko Tomita | 2008-05-27 |
| 7157777 | Semiconductor device including silicided source and drain electrodes | Shoko Tomita | 2007-01-02 |
| 7115905 | Semiconductor device including forming an amorphous silicon layer over and reacting with a silicide layer | — | 2006-10-03 |
| 7094693 | Method of manufacturing semiconductor device and semiconductor device | — | 2006-08-22 |
| 6815298 | Method of forming a semiconductor device including forming an amorphous silicon layer over and reacting with a silicide layer | — | 2004-11-09 |
| 6683356 | Semiconductor device with oxygen doped regions | — | 2004-01-27 |
| 6545327 | Semiconductor device having different gate insulating films with different amount of carbon | — | 2003-04-08 |
| 6271566 | Semiconductor device having a carbon containing insulation layer formed under the source/drain | — | 2001-08-07 |
| 6127237 | Etching end point detecting method based on junction current measurement and etching apparatus | — | 2000-10-03 |
| 6054371 | Method of manufacturing a semiconductor device by detachably mounting substrates to a holder board | Yasushi Nakasaki, Akira Nishiyama, Yukihito Oowaki, Hirotaka Nishino | 2000-04-25 |
| 6051509 | Semiconductor integrated circuit manufacturing method and device | — | 2000-04-18 |
| 5963789 | Method for silicon island formation | — | 1999-10-05 |
| 5895255 | Shallow trench isolation formation with deep trench cap | — | 1999-04-20 |
| 5756391 | Anti-oxidation layer formation by carbon incorporation | — | 1998-05-26 |