TI

Toshihiro Iizuka

RE Renesas Electronics: 7 patents #554 of 4,529Top 15%
NE Nec: 5 patents #2,830 of 14,502Top 20%
ST Sandisk Technologies: 4 patents #630 of 2,224Top 30%
NE Nec Electronics: 1 patents #715 of 1,789Top 40%
Tdk: 1 patents #2,493 of 3,796Top 70%
Samsung: 1 patents #49,284 of 75,807Top 70%
📍 Yokkaichi, JP: #197 of 2,072 inventorsTop 10%
Overall (All Time): #235,976 of 4,157,543Top 6%
19
Patents All Time

Issued Patents All Time

Showing 1–19 of 19 patents

Patent #TitleCo-InventorsDate
11424140 Member, method of manufacturing the same, apparatus for manufacturing the same, and semiconductor manufacturing apparatus Changhwan Kim, Kenichi Nagayama, Takafumi Noguchi 2022-08-23
10797060 Three-dimensional memory device having stressed vertical semiconductor channels and method of making the same Rahul Sharangpani, Raghuveer S. Makala, Adarsh Rajashekhar, Fei Zhou, Srikanth Ranganathan +1 more 2020-10-06
10797061 Three-dimensional memory device having stressed vertical semiconductor channels and method of making the same Akio Nishida, Rahul Sharangpani, Raghuveer S. Makala, Adarsh Rajashekhar, Fei Zhou +1 more 2020-10-06
10658469 Semiconductor device including a plurality of nitride semiconductor layers Shin Koyama, Yoshitake Kato 2020-05-19
10115899 Methods and apparatus for three-dimensional nonvolatile memory Yusuke Yoshida, Tomohiro Uno, Tomoyuki Obu, Takeki Ninomiya 2018-10-30
9443910 Silicided bit line for reversible-resistivity memory Kan Fujiwara, Takuya Futase, Shin Kikuchi, Yoichiro Tanaka, Akio Nishida +1 more 2016-09-13
8815678 Method for fabricating a metal-insulator-metal (MIM) capacitor having capacitor dielectric layer formed by atomic layer deposition (ALD) Tomoe Yamamoto, Mami Toda, Shintaro Yamamichi 2014-08-26
8440521 Method of manufacturing a semiconductor device Naomi Fukumaki, Eiji Hasegawa, Ichiro Yamamoto 2013-05-14
8212299 Semiconductor device having a thin film capacitor of a MIM (metal-insulator-metal) structure Tomoe Yamamoto, Mami Toda, Shintaro Yamamichi 2012-07-03
8188547 Semiconductor device with complementary transistors that include hafnium-containing gate insulators and metal gate electrodes Kenzo Manabe, Daisuke Ikeno 2012-05-29
8169013 Metal-insulator-metal (MIM) capacitor having capacitor dielectric material selected from a group consisting of ZRO2, HFO2, (ZRX, HF1-X)O2 (0 Tomoe Yamamoto, Mami Toda, Shintaro Yamamichi 2012-05-01
7943475 Process for manufacturing a semiconductor device comprising a metal-compound film Tomoe Yamamoto 2011-05-17
6875667 Method for forming capacitor Tomoe Yamamoto 2005-04-05
6602722 Process for fabricating capacitor having dielectric layer with pervskite structure and apparatus for fabricating the same Ichiro Yamamoto, Yoshitake Kato 2003-08-05
6596602 Method of fabricating a high dielectric constant metal oxide capacity insulator film using atomic layer CVD Tomoe Yamamoto 2003-07-22
6448597 DRAM having a stacked capacitor and a method for fabricating the same Naoki Kasai 2002-09-10
6349019 Magnetic head device with constant head floating height Yukihito Ito, Shoji Toyoda 2002-02-19
6338996 Semiconductor memory device production method 2002-01-15
6326258 Method of manufacturing semiconductor device having thin film capacitor 2001-12-04