TL

Thomas Laska

Infineon Technologies Ag: 7 patents #1,246 of 7,486Top 20%
SA Siemens Aktiengesellschaft: 3 patents #4,667 of 22,248Top 25%
IA Infineon Technologies Austria Ag: 1 patents #668 of 1,126Top 60%
Overall (All Time): #456,287 of 4,157,543Top 15%
11
Patents All Time

Issued Patents All Time

Showing 1–11 of 11 patents

Patent #TitleCo-InventorsDate
10777506 Silicon carbide semiconductor device having a metal adhesion and barrier structure and a method of forming such a semiconductor device Frank Hille, Ravi Keshav Joshi, Michael Fugger, Oliver Humbel, Matthias Müller +6 more 2020-09-15
10475743 Semiconductor device having a metal adhesion and barrier structure and a method of forming such a semiconductor device Frank Hille, Ravi Keshav Joshi, Michael Fugger, Oliver Humbel, Matthias Mueller +6 more 2019-11-12
8030744 Arrangement for electrically connecting semiconductor circuit arrangements to an external contact device and method for producing the same Matthias Stecher, Gregory Bellynck, Khalil Hosseini, Joachim Mahler 2011-10-04
7851913 Semiconductor device including a power device with first metal layer and second metal layer laterally spaced apart Thomas Gutt, Dirk Siepe, Michael Melzl, Matthias Stecher, Roman Roth 2010-12-14
7709887 Semiconductor component and method Frank Hille, Frank Umbach, Anton Mauder, Hans-Joachim Schulze, Manfred Pfaffenlehner 2010-05-04
7709938 Arrangement for electrically connecting semiconductor circuit arrangements to an external contact device and method for producing the same Matthias Stecher, Gregory Bellynck, Khalil Hosseini, Joachim Mahler 2010-05-04
7005761 Circuit configuration for off-load switching, switch mode power supply, clocked supply, voltage regulator, lamp switch, and methods for operating the circuit configuration Gerald Deboy, Holger Huesken 2006-02-28
6309920 Bipolar transistor which can be controlled by field effect and method for producing the same Franz Auerbach, Heinrich Brunner, Alfred Porst, Jenoe Tihanyi, Gerhard Miller 2001-10-30
6309965 Method of producing a semiconductor body with metallization on the back side that includes a titanium nitride layer to reduce warping Martin Matschitsch, Herbert Mascher, Andreas Matzler, Werner Stefaner, Gernot Moik 2001-10-30
6147403 Semiconductor body with metallizing on the back side Martin Matschitsch, Herbert Mascher, Andreas Matzler, Werner Stefaner, Gernot Moik 2000-11-14
5726474 Field effect controlled semiconductor component with integrated resistance therein Gerhard Miller, Alfred Porst 1998-03-10