Issued Patents All Time
Showing 25 most recent of 77 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7829455 | Method for creating barriers for copper diffusion | Vladimir Zubkov | 2010-11-09 |
| 7670645 | Method of treating metal and metal salts to enable thin layer deposition in semiconductor processing | James Kimball | 2010-03-02 |
| 7323228 | Method of vaporizing and ionizing metals for use in semiconductor processing | James Kimball | 2008-01-29 |
| 7132336 | Method and apparatus for forming a memory structure having an electron affinity region | Vladimir Zubkov, Grace Sun | 2006-11-07 |
| 7115991 | Method for creating barriers for copper diffusion | Vladimir Zubkov | 2006-10-03 |
| 7084408 | Vaporization and ionization of metals for use in semiconductor processing | James Kimball | 2006-08-01 |
| 7081296 | Method for growing thin films | Vladimir Zubkov, Richard Schinella | 2006-07-25 |
| 7015168 | Low dielectric constant fluorine and carbon-containing silicon oxide dielectric material characterized by improved resistance to oxidation | Vladimir Zubkov | 2006-03-21 |
| 6989565 | Memory device having an electron trapping layer in a high-K dielectric gate stack | Vladimir Zubkov, Grace Sun | 2006-01-24 |
| 6930362 | Calcium doped polysilicon gate electrodes | Mohammad Mirabedini, Grace Sun | 2005-08-16 |
| 6919263 | High-K dielectric gate material uniquely formed | Vladimir Zubkov, Grace Sun | 2005-07-19 |
| 6897102 | Process to minimize polysilicon gate depletion and dopant penetration and to increase conductivity | Mohammed Mirabedini | 2005-05-24 |
| 6858195 | Process for forming a low dielectric constant fluorine and carbon-containing silicon oxide dielectric material | Vladimir Zubkov | 2005-02-22 |
| 6831348 | Integrated circuit isolation system | Helmut Puchner | 2004-12-14 |
| 6822308 | Method of chemically altering a silicon surface and associated electrical devices | Vladimir Zubkov | 2004-11-23 |
| 6759337 | Process for etching a controllable thickness of oxide on an integrated circuit structure on a semiconductor substrate using nitrogen plasma and plasma and an rf bias applied to the substrate | Valeriy Sukharev, John Haywood, James Kimball, Helmut Puchner, Ravindra M. Kapre +1 more | 2004-07-06 |
| 6747358 | Self-aligned alloy capping layers for copper interconnect structures | Paul Rissman, Richard Schinella, Vladimir Zubkov | 2004-06-08 |
| 6743474 | Method for growing thin films | Vladimir Zubkov, Richard Schinella | 2004-06-01 |
| 6673498 | Method for reticle formation utilizing metal vaporization | Vladimir Zubkov, Richard Schinella | 2004-01-06 |
| 6649219 | Process for forming a low dielectric constant fluorine and carbon-containing silicon oxide dielectric material characterized by improved resistance to oxidation | Vladimir Zubkov | 2003-11-18 |
| 6627556 | Method of chemically altering a silicon surface and associated electrical devices | Vladimir Zubkov | 2003-09-30 |
| 6613651 | Integrated circuit isolation system | Helmut Puchner | 2003-09-02 |
| 6572925 | Process for forming a low dielectric constant fluorine and carbon containing silicon oxide dielectric material | Vladimir Zubkov | 2003-06-03 |
| 6566262 | Method for creating self-aligned alloy capping layers for copper interconnect structures | Paul Rissman, Richard Schinella, Vladimir Zubkov | 2003-05-20 |
| 6511925 | Process for forming high dielectric constant gate dielectric for integrated circuit structure | Vladimir Zubkov, Helmut Puchner | 2003-01-28 |