Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for creating self-aligned alloy capping layers for copper interconnect structures

Method for creating self-aligned alloy capping layers for copper interconnect structures

US Patent 6566262 · Granted May 20, 2003

Estimated economic value: $2,301,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

In situ vapor phase surface activation of SiO22014
Method to increase tensile stress of silicon nitride films using a post PECVD de2014
Method of forming flash memory with ultraviolet treatment2013
Silicon dioxide layer deposited with BDEAS2013
Method of forming a non-volatile memory having a silicon nitride charge trap lay2012
Method to increase tensile stress of silicon nitride films using a post PECVD de2012
Mask patterns for use in multiple-exposure lithography2011
Method for creating barriers for copper diffusion2010
Method for creating barriers for copper diffusion2010
Method of forming non-volatile memory having charge trap layer with compositiona2010
Method to increase the compressive stress of PECVD dielectric films2010
Mask-patterns including intentional breaks2010