Issued Patents All Time
Showing 25 most recent of 67 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12068161 | Method for implant and anneal for high voltage field effect transistors | James R. Shealy | 2024-08-20 |
| 12062738 | Beryllium doped GaN-based light emitting diode and method | James R. Shealy | 2024-08-13 |
| 12046699 | Beryllium doped GaN-based light emitting diode and method | James R. Shealy | 2024-07-23 |
| 11942537 | Vertical field effect transistor device and method of fabrication | James R. Shealy | 2024-03-26 |
| 11804574 | Streamlined GaN-based fabrication of light emitting diode structures | Christopher M. Martin, Shikhar Bajracharya | 2023-10-31 |
| 11652165 | Vertical field effect transistor device and method of fabrication | James R. Shealy | 2023-05-16 |
| 11469348 | Beryllium doped GaN-based light emitting diode and method | James R. Shealy | 2022-10-11 |
| 11251295 | Vertical field effect transistor device and method of fabrication | James R. Shealy | 2022-02-15 |
| 11114587 | Streamlined GaN-based fabrication of light emitting diode structures | Christopher M. Martin, Shikhar Bajracharya | 2021-09-07 |
| 9991360 | Method for forming III-V semiconductor structures including aluminum-silicon nitride passivation | James R. Shealy | 2018-06-05 |
| 9484470 | Method of fabricating a GaN P-i-N diode using implantation | Isik C. Kizilyalli, Hui Nie, Andrew P. Edwards, Donald R. Disney | 2016-11-01 |
| 9450112 | GaN-based Schottky barrier diode with algan surface layer | Thomas R. Prunty, David P. Bour, Isik C. Kizilyalli, Hui Nie, Andrew P. Edwards +2 more | 2016-09-20 |
| 9330918 | Edge termination by ion implantation in gallium nitride | Isik C. Kizilyalli, Hui Nie, Andrew P. Edwards, Linda Romano, David P. Bour +1 more | 2016-05-03 |
| 9324844 | Method and system for a GaN vertical JFET utilizing a regrown channel | Isik C. Kizilyalli, Hui Nie, Andrew P. Edwards, Linda Romano, David P. Bour +1 more | 2016-04-26 |
| 9318331 | Method and system for diffusion and implantation in gallium nitride based devices | David P. Bour, Isik C. Kizilyalli, Thomas R. Prunty, Linda Romano, Andrew P. Edwards +2 more | 2016-04-19 |
| 9318619 | Vertical gallium nitride JFET with gate and source electrodes on regrown gate | Donald R. Disney, Hui Nie, Isik C. Kizilyalli | 2016-04-19 |
| 9306050 | III-V semiconductor structures including aluminum-silicon nitride passivation | James R. Shealy | 2016-04-05 |
| 9299821 | Gated III-V semiconductor structure and method | James R. Shealy | 2016-03-29 |
| 9287389 | Method and system for doping control in gallium nitride based devices | Isik C. Kizilyalli, Hui Nie, Andrew P. Edwards, Linda Romano, David P. Bour +1 more | 2016-03-15 |
| 9269793 | Method and system for a gallium nitride self-aligned vertical MESFET | Isik C. Kizilyalli, Hui Nie, Andrew P. Edwards, David P. Bour | 2016-02-23 |
| 9224828 | Method and system for floating guard rings in gallium nitride materials | Andrew P. Edwards, Hui Nie, Isik C. Kizilyalli, David P. Bour, Linda Romano +1 more | 2015-12-29 |
| 9196679 | Schottky diode with buried layer in GaN materials | Andrew P. Edwards, Hui Nie, Isik C. Kizilyalli, David P. Bour, Linda Romano +1 more | 2015-11-24 |
| 9184305 | Method and system for a GAN vertical JFET utilizing a regrown gate | Isik C. Kizilyalli, Hui Nie, Andrew P. Edwards, Linda Romano, David P. Bour +1 more | 2015-11-10 |
| 9171751 | Method and system for fabricating floating guard rings in GaN materials | Donald R. Disney, Andrew P. Edwards, Hui Nie, Isik C. Kizilyalli, David P. Bour +2 more | 2015-10-27 |
| 9171937 | Monolithically integrated vertical JFET and Schottky diode | Isik C. Kizilyalli, Hui Nie, Andrew P. Edwards, Linda Romano, David P. Bour +1 more | 2015-10-27 |