Issued Patents All Time
Showing 1–21 of 21 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12136623 | Multi-device semiconductor chip with electrical access to devices at either side | Edward Fuergut, Ralf Otremba, Hans-Joachim Schulze | 2024-11-05 |
| 8854087 | Electronic circuit with a reverse conducting transistor device | Dethard Peters, Ralf Siemieniec | 2014-10-07 |
| 8803160 | Lightly doped silicon carbide wafer and use thereof in high power devices | Alexandre Ellison, Björn Magnusson, Asko Vehanen, Dietrich Stephani, Heinz Mitlehner | 2014-08-12 |
| 8772140 | Production method for a unipolar semiconductor component and semiconductor device | Rudolf Elpelt | 2014-07-08 |
| 8637922 | Semiconductor device | Ralf Siemieniec, Dethard Peters | 2014-01-28 |
| 8102012 | Transistor component having a shielding structure | Dethard Peters, Rudolf Elpelt, Larissa Wehrhahn-Kilian, Michael Treu, Roland Rupp | 2012-01-24 |
| 8097524 | Lightly doped silicon carbide wafer and use thereof in high power devices | Alexandre Ellison, Björn Magnusson, Asko Vehanen, Dietrich Stephani, Heinz Mitlehner | 2012-01-17 |
| 7777553 | Simplified switching circuit | — | 2010-08-17 |
| 7763506 | Method for making an integrated circuit including vertical junction field effect transistors | Michael Treu, Roland Rupp, Heinz Mitlehner, Rudolf Elpelt, Larissa Wehrhahn-Kilian | 2010-07-27 |
| 7646026 | SiC-PN power diode | Dethard Peters, Reinhold Schorner, Dietrich Stephani | 2010-01-12 |
| 7482068 | Lightly doped silicon carbide wafer and use thereof in high power devices | Alexandre Ellison, Björn Magnusson, Asko Vehanen, Dietrich Stephani, Heinz Mitlehner | 2009-01-27 |
| 7206178 | Electronic switching device | Gerd Griepentrog, Reinhard Maier, Heinz Mitlehner, Reinhold Schorner | 2007-04-17 |
| 7082020 | Electronic switching device and an operating method thereof | Heinz Mitlehner, Reinhold Schorner | 2006-07-25 |
| 7071503 | Semiconductor structure with a switch element and an edge element | Karl-Otto Dohnke, Rudolf Elpelt, Heinz Mitlehner, Reinhold Schorner | 2006-07-04 |
| 6936850 | Semiconductor device made from silicon carbide with a Schottky contact and an ohmic contact made from a nickel-aluminum material | Dethard Peters, Reinhold Schoerner | 2005-08-30 |
| 6822842 | Switching device for switching at a high operating voltage | Heinz Mitlehner | 2004-11-23 |
| 6815351 | Method for contacting a semiconductor configuration | Dethard Peters, Reinhold Schorner | 2004-11-09 |
| 6693322 | Semiconductor construction with buried island region and contact region | Heinz Mitlehner, Reinhold Schorner | 2004-02-17 |
| 6667495 | Semiconductor configuration with ohmic contact-connection and method for contact-connecting a semiconductor configuration | Dethard Peters, Reinhold Schorner | 2003-12-23 |
| 6316791 | Semiconductor structure having a predetermined alpha-silicon carbide region, and use of this semiconductor structure | Reinhold Schorner, Dietrich Stephani, Dethard Peters | 2001-11-13 |
| 6117751 | Method for manufacturing a mis structure on silicon carbide (SiC) | Reinhold Schoerner | 2000-09-12 |