MJ

Miho Jomen

TL Tokyo Electron Limited: 6 patents #1,241 of 5,567Top 25%
📍 Watervliet, NY: #40 of 109 inventorsTop 40%
🗺 New York: #23,203 of 115,490 inventorsTop 25%
Overall (All Time): #863,858 of 4,157,543Top 25%
6
Patents All Time

Issued Patents All Time

Showing 1–6 of 6 patents

Patent #TitleCo-InventorsDate
8247030 Void-free copper filling of recessed features using a smooth non-agglomerated copper seed layer Kenji Suzuki, Atsushi Gomi 2012-08-21
7884012 Void-free copper filling of recessed features for semiconductor devices Kenji Suzuki, Tadahiro Ishizaka, Jonathan Rullan 2011-02-08
7846841 Method for forming cobalt nitride cap layers Tadahiro Ishizaka, Shigeru Mizuno 2010-12-07
7799681 Method for forming a ruthenium metal cap layer Kenji Suzuki, Frank M. Cerio, Jr., Shigeru Mizuno, Yasushi Mizusawa, Tadahiro Ishizaka 2010-09-21
7776740 Method for integrating selective low-temperature ruthenium deposition into copper metallization of a semiconductor device Kenji Suzuki, Jonathan Rullan 2010-08-17
7718527 Method for forming cobalt tungsten cap layers Tadahiro Ishizaka, Shigeru Mizuno 2010-05-18