| 7556048 |
In-situ removal of surface impurities prior to arsenic-doped polysilicon deposition in the fabrication of a heterojunction bipolar transistor |
Robert Jones, William Bevers, Edward P. Martin, Jr. |
2009-07-07 |
| 6696362 |
Method for using an in situ particle sensor for monitoring particle performance in plasma deposition processes |
Kent Rossman, Phillip D. Nguyen |
2004-02-24 |
| 6218304 |
Method of determining copper reduction endpoint in the fabrication of a semiconductor device |
— |
2001-04-17 |
| 6156675 |
Method for enhanced dielectric film uniformity |
Jonathon M. Lobbins |
2000-12-05 |
| 6153543 |
High density plasma passivation layer and method of application |
Daniel Chesire, Edward P. Martin, Jr., Barbara Kotzias, Rafael N. Barba |
2000-11-28 |
| 5693561 |
Method of integrated circuit fabrication including a step of depositing tungsten |
Sailesh Mansinh Merchant, Ronald J. Schutz |
1997-12-02 |
| 5643838 |
Low temperature deposition of silicon oxides for device fabrication |
Robert E. Dean, Pang Dow Foo, Earl R. Lory |
1997-07-01 |
| 5252520 |
Integrated circuit interlevel dielectric wherein the first and second dielectric layers are formed with different densities |
Karl H. Kocmanek |
1993-10-12 |
| 5089442 |
Silicon dioxide deposition method using a magnetic field and both sputter deposition and plasma-enhanced CVD |
— |
1992-02-18 |
| 5013691 |
Anisotropic deposition of silicon dioxide |
Earl R. Lory |
1991-05-07 |
| 4675089 |
Low temperature deposition method for high quality aluminum oxide films |
Earl R. Lory |
1987-06-23 |
| 4489102 |
Radiation-stimulated deposition of aluminum |
Daniel J. Shanefield |
1984-12-18 |
