Issued Patents All Time
Showing 1–19 of 19 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12198987 | Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same | Hirokazu Sayama, Hidekazu Oda, Kouhei Sugihara | 2025-01-14 |
| 9847417 | Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same | Hirokazu Sayama, Hidekazu Oda, Kouhei Sugihara | 2017-12-19 |
| 9614081 | Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same | Hirokazu Sayama, Hidekazu Oda, Kouhei Sugihara | 2017-04-04 |
| 9412867 | Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same | Hirokazu Sayama, Hidekazu Oda, Kouhei Sugihara | 2016-08-09 |
| 9209191 | Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same | Hirokazu Sayama, Hidekazu Oda, Kouhei Sugihara | 2015-12-08 |
| 8952315 | Solid-state imaging device having a vertical transistor with a dual polysilicon gate | Tomoyuki Hirano | 2015-02-10 |
| 8809186 | Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same | Hirokazu Sayama, Hidekazu Oda, Kouhei Sugihara | 2014-08-19 |
| 8586475 | Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same | Hirokazu Sayama, Hidekazu Oda, Kouhei Sugihara | 2013-11-19 |
| 8372747 | Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same | Hirokazu Sayama, Hidekazu Oda, Kouhei Sugihara | 2013-02-12 |
| 7960281 | Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same | Hirokazu Sayama, Hidekazu Oda, Kouhei Sugihara | 2011-06-14 |
| 7470618 | Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same | Hirokazu Sayama, Hidekazu Oda, Kouhei Sugihara | 2008-12-30 |
| 7183204 | Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same | Hirokazu Sayama, Hidekazu Oda, Kouhei Sugihara | 2007-02-27 |
| 6906393 | Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same | Hirokazu Sayama, Hidekazu Oda, Kouhei Sugihara | 2005-06-14 |
| 6872642 | Manufacturing method of semiconductor device | Hidekazu Oda, Hirokazu Sayama, Kouhei Sugihara | 2005-03-29 |
| 6869865 | Method of manufacturing semiconductor device | Shigeto Maegawa, Takashi Ipposhi, Yasuo Inoue, Masanobu Kohara, Takashi Eura +1 more | 2005-03-22 |
| 6864128 | Manufacturing method for a semiconductor device | Yukio Nishida | 2005-03-08 |
| 6835610 | Method of manufacturing semiconductor device having gate electrode with expanded upper portion | Hirokazu Sayama, Hidekazu Oda, Kouhei Sugihara | 2004-12-28 |
| 6740939 | Semiconductor device and manufacturing method thereof | Hirokazu Sayama, Yukio Nishida, Hidekazu Oda | 2004-05-25 |
| 6333222 | Semiconductor device and manufacturing method thereof | Masashi Kitazawa, Masayoshi Shirahata | 2001-12-25 |