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Gallium nitride transistor with a doped region |
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Gallium nitride (GaN) based transistor with multiple p-GaN blocks |
Chang Soo Suh, Sameer Pendharkar, Naveen Tipirneni |
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Strapped copper interconnect for improved electromigration reliability |
Young-Joon Park |
2024-07-02 |
| 11978790 |
Normally-on gallium nitride based transistor with p-type gate |
Chang Soo Suh, Dong Seup Lee, Shoji Wada, Karen Hildegard Ralston Kirmse |
2024-05-07 |
| 11888027 |
Monolithic integration of high and low-side GaN FETs with screening back gating effect |
Dong Seup Lee, Qhalid Fareed, Sridhar Seetharaman, Chang Soo Suh |
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Gallium nitride transistor with a doped region |
Dong Seup Lee, Pinghai Hao, Sameer Pendharkar |
2023-09-26 |
| 11177378 |
HEMT having conduction barrier between drain fingertip and source |
Naveen Tipirneni, Chang Soo Suh, Sameer Pendharkar |
2021-11-16 |
| 11067620 |
HEMT wafer probe current collapse screening |
Dong Seup Lee, Pinghai Hao, Sameer Pendharkar |
2021-07-20 |
| 11049960 |
Gallium nitride (GaN) based transistor with multiple p-GaN blocks |
Chang Soo Suh, Sameer Pendharkar, Naveen Tipirneni |
2021-06-29 |
| 10964803 |
Gallium nitride transistor with a doped region |
Dong Seup Lee, Pinghai Hao, Sameer Pendharkar |
2021-03-30 |
| 10861943 |
Transistor with multiple GaN-based alloy layers |
Dong Seup Lee, Pinghai Hao, Sameer Pendharkar |
2020-12-08 |
| 10707324 |
Group IIIA-N HEMT with a tunnel diode in the gate stack |
Chang Soo Suh, Dong Seup Lee, Naveen Tipirneni, Sameer Pendharkar |
2020-07-07 |
| 10680093 |
HEMT having conduction barrier between drain fingertip and source |
Naveen Tipirneni, Chang Soo Suh, Sameer Pendharkar |
2020-06-09 |
| 10381456 |
Group IIIA-N HEMT with a tunnel diode in the gate stack |
Chang Soo Suh, Dong Seup Lee, Naveen Tipirneni, Sameer Pendharkar |
2019-08-13 |
| 10192799 |
Method and apparatus to model and monitor time dependent dielectric breakdown in multi-field plate gallium nitride devices |
Dong Seup Lee, Sameer Pendharkar |
2019-01-29 |
| 10014231 |
Method and apparatus to model and monitor time dependent dielectric breakdown in multi-field plate gallium nitride devices |
Dong Seup Lee, Sameer Pendharkar |
2018-07-03 |
| 9882041 |
HEMT having conduction barrier between drain fingertip and source |
Naveen Tipirneni, Chang Soo Suh, Sameer Pendharkar |
2018-01-30 |
| 9553151 |
III-nitride device and method having a gate isolating structure |
Sameer Pendharkar, Naveen Tipirneni |
2017-01-24 |
| 9476933 |
Apparatus and methods for qualifying HEMT FET devices |
Srikanth Krishnan, Sameer Pendharkar |
2016-10-25 |
| 9112011 |
FET dielectric reliability enhancement |
Asad Haider |
2015-08-18 |
| 9054027 |
III-nitride device and method having a gate isolating structure |
Sameer Pendharkar, Naveen Tipirneni |
2015-06-09 |
| 8916427 |
FET dielectric reliability enhancement |
Asad Haider |
2014-12-23 |
| 8789109 |
System for recommending favorite channel/program based on TV watching pattern and method thereof |
— |
2014-07-22 |
| 8759879 |
RESURF III-nitride HEMTs |
Naveen Tipirneni, Sameer Pendharkar |
2014-06-24 |
