Issued Patents All Time
Showing 1–25 of 43 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10978585 | MOS device with island region | Anup Bhalla, Xiaobin Wang, Sung-Po Wei | 2021-04-13 |
| 10763351 | Vertical trench DMOSFET having integrated implants forming enhancement diodes in parallel with the body diode | Anup Bhalla | 2020-09-01 |
| 10535764 | Device and fabrication of MOS device with island region | Anup Bhalla, Xiaobin Wang, Sung-Po Wei | 2020-01-14 |
| 10388781 | Device structure having inter-digitated back to back MOSFETs | Madhur Bobde, Sik Lui | 2019-08-20 |
| 10325908 | Compact source ballast trench MOSFET and method of manufacturing | Sik Lui, Madhur Bobde | 2019-06-18 |
| 10256236 | Forming switch circuit with controllable phase node ringing | Sik Lui | 2019-04-09 |
| 10192982 | Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact | Hamza Yilmaz, Daniel Ng, Daniel Calafut, Madhur Bobde, Anup Bhalla +2 more | 2019-01-29 |
| 10103140 | Switch circuit with controllable phase node ringing | Sik Lui | 2018-10-16 |
| 10074742 | MOS device with island region | Anup Bhalla, Xiaobin Wang, Sung-Po Wei | 2018-09-11 |
| 10062685 | Variable snubber for MOSFET application | Sik Lui | 2018-08-28 |
| 9754788 | Manufacturing method of semiconductor structure including planarizing a polysilicon layer over an array area and a periphery area | Han Fang, Boon-Tiong Neo | 2017-09-05 |
| 9748375 | Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact | Hamza Yilmaz, Daniel Ng, Daniel Calafut, Madhur Bobde, Anup Bhalla +2 more | 2017-08-29 |
| 9685435 | Integrated snubber in a single poly MOSFET | Sik Lui | 2017-06-20 |
| 9564516 | Method of making integrated MOSFET-schottky diode device with reduced source and body kelvin contact impedance and breakdown voltage | — | 2017-02-07 |
| 9356022 | Semiconductor device with termination structure for power MOSFET applications | Yeeheng Lee, Madhur Bobde, Daniel Calafut, Hamza Yilmaz, Xiaobin Wang +2 more | 2016-05-31 |
| 9312336 | MOSFET device with reduced breakdown voltage | Anup Bhalla | 2016-04-12 |
| 9281394 | Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact | Hamza Yilmaz, Daniel Ng, Daniel Calafut, Madhur Bobde, Anup Bhalla +2 more | 2016-03-08 |
| 9236450 | Fabrication of MOS device with schottky barrier controlling layer | Anup Bhalla, Xiaobin Wang, Sung-Po Wei | 2016-01-12 |
| 9230957 | Integrated snubber in a single poly MOSFET | Sik Lui | 2016-01-05 |
| 9117695 | Method for fabricating semiconductor device | Han Fang, Boon-Tiong Neo | 2015-08-25 |
| 9105494 | Termination trench for power MOSFET applications | Yeeheng Lee, Madhur Bodbe, Daniel Calafut, Hamza Yilmaz, Xiaobin Wang +2 more | 2015-08-11 |
| 9059147 | Junction barrier schottky (JBS) with floating islands | Anup Bhalla | 2015-06-16 |
| 9006053 | Method of making MOSFET integrated with schottky diode with simplified one-time top-contact trench etching | Daniel Ng, Sung-Shan Tai, Anup Bhalla | 2015-04-14 |
| 8969950 | Integrated MOSFET-Schottky diode device with reduced source and body Kelvin contact impedance and breakdown voltage | — | 2015-03-03 |
| 8928079 | MOS device with low injection diode | Anup Bhalla, Xiaobin Wang, Sung-Po Wei | 2015-01-06 |