HY

Hyucksoo Yang

Globalfoundries: 4 patents #817 of 4,424Top 20%
Micron: 1 patents #4,761 of 6,345Top 80%
Samsung: 1 patents #49,284 of 75,807Top 70%
Overall (All Time): #778,971 of 4,157,543Top 20%
6
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
12274051 Metal gate memory device and method Jongpyo Kim, Byung Yoon Kim 2025-04-08
9356147 FinFET spacer etch for eSiGe improvement Hong Yu, Puneet Khanna 2016-05-31
9324841 Methods for preventing oxidation damage during FinFET fabrication Hong Yu, Huang Liu, Richard J. Carter 2016-04-26
9236312 Preventing EPI damage for cap nitride strip scheme in a Fin-shaped field effect transistor (FinFET) device Hong Yu, Richard J. Carter 2016-01-12
9024368 Fin-type transistor structures with extended embedded stress elements and fabrication methods Hong Yu, Bingwu Liu, Puneet Khanna, Lun Zhao 2015-05-05
8891316 Nonvolatile memory devices including notched word lines Boyoung Seo, Yongkyu Lee, Yongtae Kim, Byungsup Shim 2014-11-18