Issued Patents All Time
Showing 25 most recent of 104 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12429520 | Systems, devices, and methods for performing a non-contact electrical measurement on a cell, non-contact electrical measurement cell vehicle, chip, wafer, die, or logic block | Indranil De, Marian Mankos, Christopher Hess, Jeremy Cheng, Balasubramanian Murugan +1 more | 2025-09-30 |
| 12038802 | Collaborative learning model for semiconductor applications | Tomonori Honda, Richard Burch, John Kibarian, Lin Lee Cheong, Qing Zhu +6 more | 2024-07-16 |
| 12038476 | Systems, devices, and methods for performing a non-contact electrical measurement on a cell, non-contact electrical measurement cell vehicle, chip, wafer, die, or logic block | Indranil De, Marian Mankos, Christopher Hess, Jeremy Cheng, Balasubramanian Murugan +1 more | 2024-07-16 |
| 11668746 | Systems, devices, and methods for performing a non-contact electrical measurement on a cell, non-contact electrical measurement cell vehicle, chip, wafer, die, or logic block | Indranil De, Marian Mankos, Christopher Hess, Jeremy Cheng, Balasubramanian Murugan +1 more | 2023-06-06 |
| 11340293 | Methods for performing a non-contact electrical measurement on a cell, chip, wafer, die, or logic block | Indranil De, Marian Mankos, Christopher Hess, Jeremy Cheng, Balasubramanian Murugan +1 more | 2022-05-24 |
| 11107804 | IC with test structures and e-beam pads embedded within a contiguous standard cell area | Stephen Lam, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +21 more | 2021-08-31 |
| 11081477 | IC with test structures and e-beam pads embedded within a contiguous standard cell area | Stephen Lam, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +21 more | 2021-08-03 |
| 11081476 | IC with test structures and e-beam pads embedded within a contiguous standard cell area | Stephen Lam, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +21 more | 2021-08-03 |
| 11075194 | IC with test structures and E-beam pads embedded within a contiguous standard cell area | Stephen Lam, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +21 more | 2021-07-27 |
| 11018126 | IC with test structures and e-beam pads embedded within a contiguous standard cell area | Stephen Lam, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +21 more | 2021-05-25 |
| 10978438 | IC with test structures and E-beam pads embedded within a contiguous standard cell area | Stephen Lam, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +21 more | 2021-04-13 |
| 10854522 | Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-side short or leakage, at least one corner short or leakage, and at least one via open or resistance, where such measurements are obtained from non-contact pads associated with respective tip-to-side short, corner short, and via open test areas | Stephen Lam, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +20 more | 2020-12-01 |
| 10777472 | IC with test structures embedded within a contiguous standard cell area | Stephen Lam, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +20 more | 2020-09-15 |
| 10593604 | Process for making semiconductor dies, chips, and wafers using in-line measurements obtained from DOEs of NCEM-enabled fill cells | Stephen Lam, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +20 more | 2020-03-17 |
| 10290552 | Methods for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one via-chamfer short or leakage, and at least one corner short or leakage, where such measurements are obtained from cells with respective tip-to-tip short, via-chamfer short, and corner short test areas, using a charged particle-beam inspector with beam deflection to account for motion of the stage | Stephen Lam, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +20 more | 2019-05-14 |
| 10269786 | Integrated circuit containing first and second DOEs of standard Cell Compatible, NCEM-enabled Fill Cells, with the first DOE including tip-to-side short configured fill cells, and the second DOE including corner short configured fill cells | Stephen Lam, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +20 more | 2019-04-23 |
| 10211111 | Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one tip-to-side short or leakage, and at least one corner short or leakage, where such measurements are obtained from non-contact pads associated with respective tip-to-tip short, tip-to-side sort, and corner short test areas | Stephen Lam, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +20 more | 2019-02-19 |
| 10211112 | Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one tip-to-side short or leakage, and at least one side-to-side short or leakage, where such measurements are obtained from non-contact pads associated with respective tip-to-tip short, tip-to-side short, and side-to-side short test areas | Stephen Lam, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +20 more | 2019-02-19 |
| 10199294 | Method for processing a semiconductor wafer using non-contact electrical measurements indicative of a least one side-to-side short or leakage, at least one via-chamfer short or leakage, and at least one corner short or leakage, where such measurements are obtained from cells with respective side-to-side short, via-chamfer short, and corner short test areas, using a charged particle-beam inspector with beam deflection to account for motion of the stage | Stephen Lam, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +20 more | 2019-02-05 |
| 10199293 | Method for processing a semiconductor water using non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one side-to-side short or leakage, and at least one chamfer short or leakage, where such measurements are obtained from non-contact pads associated with respective tip-to-tip short, side to side short, and chamfer short test areas | Stephen Lam, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +20 more | 2019-02-05 |
| 10199290 | Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one tip-to-side short or leakage, and at least one side-to-side short or leakage, where such measurements are obtained from cells with respective tip-to-tip short, tip-to-side short, and side-to-side short test areas, using a charged particle-beam inspector with beam deflection to account for motion of the stage | Stephen Lam, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +20 more | 2019-02-05 |
| 10199289 | Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one chamfer short or leakage, at least one corner short or leakage, and at least one via open or resistance, where such measurements are obtained from non-contact pads associated with respective chamfer short, corner short, and via open test areas | Stephen Lam, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +20 more | 2019-02-05 |
| 10199288 | Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one side-to-side short or leakage, at least one corner short or leakage, and at least one via open or resistance, where such measurements are obtained from non-contact pads associated with respective side-to-side short, corner short, and via open test areas | Stephen Lam, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +20 more | 2019-02-05 |
| 10199287 | Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-side short or leakage, at least one chamfer short or leakage, and at least one via open or resistance, where such measurements are obtained from non-contact pads associated with respective tip-to-side short, chamfer short, and via open test areas | Stephen Lam, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +20 more | 2019-02-05 |
| 10199286 | Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-side short or leakage, at least one chamfer short or leakage, and at least one corner short or leakage, where such measurements are obtained from non-contact pads associated with respective tip-to-side short, chamfer short, and corner short test areas | Stephen Lam, Tomasz Brozek, Jeremy Cheng, Simone Comensoli, Indranil De +20 more | 2019-02-05 |