Issued Patents All Time
Showing 25 most recent of 145 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12190925 | Magnetic exchange coupled MTJ free layer having low switching current and high data retention | Guohan Hu | 2025-01-07 |
| 12063868 | Low RA narrow base modified double magnetic tunnel junction structure | Guohan Hu | 2024-08-13 |
| 12020736 | Spin-orbit-torque magnetoresistive random-access memory array | Pouya Hashemi, John K. DeBrosse | 2024-06-25 |
| 11569439 | Double spin filter tunnel junction | — | 2023-01-31 |
| 11557628 | Multilayered magnetic free layer structure containing an ordered magnetic alloy first magnetic free layer for spin-transfer torque (STT) MRAM | Guohan Hu | 2023-01-17 |
| 11527707 | In-situ annealing and etch back steps to improve exchange stiffness in cobalt iron boride based perpendicular magnetic anisotropy free layers | Stephen L. Brown, Guohan Hu, Jonathan Z. Sun | 2022-12-13 |
| 11501810 | Amorphous spin diffusion layer for modified double magnetic tunnel junction structure | Guohan Hu | 2022-11-15 |
| 11417837 | Double spin filter tunnel junction | — | 2022-08-16 |
| 11309488 | Double spin filter tunnel junction | — | 2022-04-19 |
| 11302863 | STT MRAM matertails with heavy metal insertion | Guohan Hu | 2022-04-12 |
| 11289644 | Magnetic tunnel junction having all-around structure | Kotb Jabeur, Jonathan Zanhong Sun, Pouya Hashemi | 2022-03-29 |
| 11264559 | Multilayered magnetic free layer structure for spin-transfer torque (STT) MRAM | Guohan Hu | 2022-03-01 |
| 11223010 | Thin reference layer for STT MRAM | Guohan Hu, Younghyun Kim | 2022-01-11 |
| 11164615 | Spin hall write select for magneto-resistive random access memory | Luqiao Liu, Jonathan Z. Sun | 2021-11-02 |
| 10916581 | Multilayered magnetic free layer structure containing an ordered magnetic alloy first magnetic free layer for spin-transfer torque (STT) MRAM | Guohan Hu | 2021-02-09 |
| 10839935 | Dynamic redundancy for memory | John K. DeBrosse, Kotb Jabeur, Matthew R. Wordeman | 2020-11-17 |
| 10734571 | Magnetic field sensor based on topological insulator and insulating coupler materials | Anthony J. Annunziata, Joel D. Chudow | 2020-08-04 |
| 10686123 | Multilayered magnetic free layer structure for spin-transfer torque (STT) MRAM | Guohan Hu | 2020-06-16 |
| 10553781 | In-situ annealing and etch back steps to improve exchange stiffness in cobalt iron boride based perpendicular magnetic anisotropy free layers | Stephen L. Brown, Guohan Hu, Jonathan Z. Sun | 2020-02-04 |
| 10510390 | Magnetic exchange coupled MTJ free layer having low switching current and high data retention | Guohan Hu, Jeong-Heon Park | 2019-12-17 |
| 10510391 | Magnetic exchange coupled MTJ free layer having low switching current and high data retention | Guohan Hu, Jeong-Heon Park | 2019-12-17 |
| 10468455 | Simplified double magnetic tunnel junctions | Guohan Hu, Younghyun Kim, Jeong-Heon Park | 2019-11-05 |
| 10453509 | Magnetic exchange coupled MTJ free layer with double tunnel barriers having low switching current and high data retention | Guohan Hu | 2019-10-22 |
| 10437665 | Bad bit register for memory | John K. DeBrosse | 2019-10-08 |
| 10424727 | Spin transfer torque cell for magnetic random access memory | Michael C. Gaidis, Janusz J. Nowak | 2019-09-24 |