Issued Patents All Time
Showing 25 most recent of 40 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12224008 | Non-volatile static random access memory | Mohammed Aftab Baig, Siao-Shan Huang, Fu-Yuan Chang | 2025-02-11 |
| 11785778 | Ferroelectric memory and memory array device with multiple independently controlled gates | Chi-Jen Lin | 2023-10-10 |
| 11728428 | Dielectric isolated fin with improved fin profile | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Kern Rim | 2023-08-15 |
| 10903208 | Distributed decoupling capacitor | Kangguo Cheng, Ali Khakifirooz, Ghavam G. Shahidi | 2021-01-26 |
| 10892364 | Dielectric isolated fin with improved fin profile | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Kern Rim | 2021-01-12 |
| 10886385 | Semiconductor structures having increased channel strain using fin release in gate regions | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek, Kern Rim | 2021-01-05 |
| 10734477 | FinFET with reduced parasitic capacitance | Kangguo Cheng, Xin Miao, Tenko Yamashita | 2020-08-04 |
| 10622451 | Flash memory with multiple control gates and flash memory array device made thereof | Yi-Chi WANG, Huai Kuan Zeng | 2020-04-14 |
| 10593663 | Distributed decoupling capacitor | Kangguo Cheng, Ali Khakifirooz, Ghavam G. Shahidi | 2020-03-17 |
| 10546955 | Dielectric isolated fin with improved fin profile | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Kern Rim | 2020-01-28 |
| 10347752 | Semiconductor structures having increased channel strain using fin release in gate regions | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek, Kern Rim | 2019-07-09 |
| 10262991 | Distributed decoupling capacitor | Kangguo Cheng, Ali Khakifirooz, Ghavam G. Shahidi | 2019-04-16 |
| 10243042 | FinFET with reduced parasitic capacitance | Kangguo Cheng, Xin Miao, Tenko Yamashita | 2019-03-26 |
| 10177223 | FinFET with reduced parasitic capacitance | Kangguo Cheng, Xin Miao, Tenko Yamashita | 2019-01-08 |
| 10153157 | P-FET with graded silicon-germanium channel | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2018-12-11 |
| 10056474 | Semiconductor structures having increased channel strain using fin release in gate regions | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek, Kern Rim | 2018-08-21 |
| 9997540 | Structure and method for compressively strained silicon germanium fins for pFET devices and tensily strained silicon fins for nFET devices | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek, Kern Rim | 2018-06-12 |
| 9966387 | Strain release in pFET regions | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek, Kern Rim | 2018-05-08 |
| 9954083 | Semiconductor structures having increased channel strain using fin release in gate regions | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek, Kern Rim | 2018-04-24 |
| 9917188 | Dielectric isolated fin with improved fin profile | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Kern Rim | 2018-03-13 |
| 9825093 | FinFET PCM access transistor having gate-wrapped source and drain regions | Chung H. Lam, Chung-Hsun Lin, Philip J. Oldiges | 2017-11-21 |
| 9825094 | FinFET PCM access transistor having gate-wrapped source and drain regions | Chung H. Lam, Chung-Hsun Lin, Philip J. Oldiges | 2017-11-21 |
| 9786737 | FinFET with reduced parasitic capacitance | Kangguo Cheng, Xin Miao, Tenko Yamashita | 2017-10-10 |
| 9761610 | Strain release in PFET regions | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek, Kern Rim | 2017-09-12 |
| 9653541 | Structure and method to make strained FinFET with improved junction capacitance and low leakage | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek, Kern Rim | 2017-05-16 |