Issued Patents All Time
Showing 1–25 of 32 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12230706 | Transistor device having a cell field and method of fabricating a gate of the transistor device | Ingmar Neumann, Michael Hutzler, Roland Moennich, Thomas Ralf Siemieniec | 2025-02-18 |
| 11848379 | MOSFET having a drift region with a graded doping profile and methods of manufacturing thereof | Ralf Siemieniec, Cedric Ouvrard | 2023-12-19 |
| 11764272 | Semiconductor device and method of manufacturing the same | Cesar Augusto Braz, Alessandro Ferrara, Cedric Ouvrard, Li Juin Yip | 2023-09-19 |
| 11600723 | Transistor device and method of fabricating a gate of a transistor device | Ingmar Neumann, Michael Hutzler, Roland Moennich, Ralf Siemieniec | 2023-03-07 |
| 11462620 | Semiconductor device having a transistor cell region and a termination region with needle-shaped field plate structures | Ralf Siemieniec, Oliver Blank, Franz Hirler, Michael Hutzler, Cedric Ouvrard +1 more | 2022-10-04 |
| 11296218 | Semiconductor device | Ralf Siemieniec, Adam Amali, Michael Hutzler, Laszlo Juhasz, Cedric Ouvrard +1 more | 2022-04-05 |
| 11251275 | Needle cell trench MOSFET | Christof Altstaetter, Marcel Mueller, Oliver Blank | 2022-02-15 |
| 11158735 | Charge compensation MOSFET with graded epi profile and methods of manufacturing thereof | Ralf Siemieniec, Cedric Ouvrard | 2021-10-26 |
| 10872957 | Semiconductor device with needle-shaped field plate structures | Ralf Siemieniec, Oliver Blank, Franz Hirler, Michael Hutzler, Cedric Ouvrard +1 more | 2020-12-22 |
| 10868173 | Semiconductor device having an edge termination area with trench electrodes at different electric potentials, and method for manufacturing thereof | Cedric Ouvrard, Adam Amali, Oliver Blank, Michael Hutzler, Harsh Naik +2 more | 2020-12-15 |
| 10811531 | Transistor device with gate resistor | Oliver Blank, Cesar Augusto Braz, Gerhard Noebauer, Cedric Ouvrard | 2020-10-20 |
| 10727331 | Semiconductor device having a reduced surface doping in an edge termination area, and method for manufacturing thereof | Cedric Ouvrard, Adam Amali, Oliver Blank, Michael Hutzler, Harsh Naik +2 more | 2020-07-28 |
| 10629595 | Power semiconductor device having different gate crossings, and method for manufacturing thereof | Cedric Ouvrard, Cesar Augusto Braz, Olivier Guillemant, Gerhard Noebauer, Li Juin Yip | 2020-04-21 |
| 10573731 | Semiconductor transistor and method for forming the semiconductor transistor | Li Juin Yip, Cesar Augusto Braz, Olivier Guillemant, Cedric Ouvrard | 2020-02-25 |
| 10566426 | Forming silicon oxide layers by radical oxidation and semiconductor device with silicon oxide layer | Anton Mauder, Oliver Hellmund, Peter Irsigler, Jens Peter Konrath, Maik Langner +5 more | 2020-02-18 |
| 10510846 | Semiconductor device with needle-shaped field plate structures in a transistor cell region and in an inner termination region | Ralf Siemieniec, Oliver Blank, Franz Hirler, Michael Hutzler, Cedric Ouvrard +1 more | 2019-12-17 |
| 10453929 | Methods of manufacturing a power MOSFET | Oliver Blank, Michael Hutzler, Cedric Ouvrard, Ralf Siemieniec, Li Juin Yip | 2019-10-22 |
| 10269953 | Semiconductor device having a trench gate | Cedric Ouvrard | 2019-04-23 |
| 10205015 | Reduced gate charge field-effect transistor | Li Juin Yip, Cedric Ouvrard | 2019-02-12 |
| 10050113 | Semiconductor device with needle-shaped field plates and a gate structure with edge and node portions | Ralf Siemieniec, Oliver Blank, Cedric Ouvrard, Li Juin Yip | 2018-08-14 |
| 9972714 | Semiconductor device with a termination mesa between a termination structure and a cell field of field electrode structures | Ralf Siemieniec | 2018-05-15 |
| 9865726 | Method of manufacturing a semiconductor device with trench gate by using a screen oxide layer | Cedric Ouvrard | 2018-01-09 |
| 9847395 | Semiconductor device including a contact structure directly adjoining a mesa section and a field electrode | Elisabeth Schwarz, Beate Weissnicht | 2017-12-19 |
| 9799738 | Semiconductor device with field electrode and contact structure | Ralf Siemieniec, Oliver Blank, Michael Hutzler, Cedric Ouvrard, Li Juin Yip | 2017-10-24 |
| 9755066 | Reduced gate charge field-effect transistor | Li Juin Yip, Cedric Ouvrard | 2017-09-05 |