Issued Patents All Time
Showing 1–25 of 166 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9455400 | Magnetic tunnel junction for MRAM applications | Wei Cao, Witold Kula, Chyu-Jiuh Torng | 2016-09-27 |
| 9331271 | Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM application | Ru-Ying Tong, Guangli Liu, Robert Beach, Witold Kula, Tai Min | 2016-05-03 |
| 9224940 | Magnetic tunnel junction for MRAM applications | Wei Cao, Witold Kula, Chyu-Jiuh Torng | 2015-12-29 |
| 9006704 | Magnetic element with improved out-of-plane anisotropy for spintronic applications | Guenole Jan, Ru-Ying Tong, Witold Kula | 2015-04-14 |
| 8969982 | Bottom electrode for MRAM device | Rongfu Xiao, Ru-Ying Tong, Chyu-Jinh Torng, Tom Zhong, Witold Kula +4 more | 2015-03-03 |
| 8823118 | Spin torque transfer magnetic tunnel junction fabricated with a composite tunneling barrier layer | Ru-Ying Tong | 2014-09-02 |
| 8786036 | Magnetic tunnel junction for MRAM applications | Wei Cao, Witold Kula, Chyu-Jiuh Torng | 2014-07-22 |
| 8749003 | High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the same | Ru-Ying Tong, Chyu-Jiuh Tomg, Witold Kula | 2014-06-10 |
| 8726491 | Method of forming a spin-transfer torque random access memory (STT-RAM) device | Ru-Ying Tong | 2014-05-20 |
| 8673654 | Underlayer for high performance magnetic tunneling junction MRAM | Liubo Hong, Mao-Min Chen, Ru-Yin Tong | 2014-03-18 |
| 8609262 | Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM application | Ru-Ying Tong, Guangli Liu, Robert Beach, Witold Kula, Tai Min | 2013-12-17 |
| 8525280 | Array of magnetic tunneling junction film structures with process determined in-plane magnetic anisotropy | Tai Min, Po-Kang Wang | 2013-09-03 |
| 8470462 | Structure and method for enhancing interfacial perpendicular anisotropy in CoFe(B)/MgO/CoFe(B) magnetic tunnel junctions | Ru-Ying Tong, Guenole Jan | 2013-06-25 |
| 8456893 | Magnetic tunnel junction (MTJ) to reduce spin transfer magnetization switching current | Ru-Ying Tong | 2013-06-04 |
| 8436437 | High performance MTJ elements for STT-RAM and method for making the same | Ru-Ying Tong, Chyu-Jiuh Torng, Witold Kula | 2013-05-07 |
| 8404367 | Low switching current dual spin filter (DSF) element for STT-RAM and a method for making the same | Ru-Ying Tong | 2013-03-26 |
| 8378330 | Capping layer for a magnetic tunnel junction device to enhance dR/R and a method of making the same | Ru-Ying Tong | 2013-02-19 |
| 8372661 | High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the same | Ru-Ying Tong, Chyu-Jiuh Torng, Witold Kula | 2013-02-12 |
| 8273666 | Process to fabricate bottom electrode for MRAM device | Rongfu Xiao, Ru-Ying Tong, Chyu-Jinh Torng, Tom Zhong, Witold Kula +4 more | 2012-09-25 |
| 8269292 | Magnetic tunnel junction (MTJ) to reduce spin transfer magnetizaton switching current | Ru-Ying Tong | 2012-09-18 |
| 8268641 | Spin transfer MRAM device with novel magnetic synthetic free layer | Yimin Guo, Ru-Ying Tong | 2012-09-18 |
| 8184411 | MTJ incorporating CoFe/Ni multilayer film with perpendicular magnetic anisotropy for MRAM application | Kunliang Zhang, Min Li, Pokang Wang, Yuchen Zhou, Ru-Ying Tong | 2012-05-22 |
| 8178363 | MRAM with storage layer and super-paramagnetic sensing layer | Po-Kang Wang, Yimin Guo, Tai Min, Ru-Ying Tong | 2012-05-15 |
| 8176622 | Process for manufacturing a magnetic tunnel junction (MTJ) device | Ru-Ying Tong, Chyu-Jiuh Torng, Witold Kula | 2012-05-15 |
| 8138561 | Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM | Ru-Ying Tong, Chyu-Jiuh Torng, Po-Kang Wang, Robert Beach, Witold Kula | 2012-03-20 |