CH

Christer Hallin

CR Cree: 10 patents #153 of 639Top 25%
AR Abb Research: 6 patents #91 of 1,276Top 8%
OK Okmetic: 4 patents #2 of 9Top 25%
NA Norstel Ab: 2 patents #7 of 11Top 65%
WO Wolfspeed: 1 patents #111 of 187Top 60%
Overall (All Time): #231,724 of 4,157,543Top 6%
19
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
11862719 Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the same Saptharishi Sriram, Thomas J. Smith, Alexander V. Suvorov 2024-01-02
10892356 Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the same Saptharishi Sriram, Thomas J. Smith, Alexander V. Suvorov 2021-01-12
10840334 Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same Saptharishi Sriram, Thomas J. Smith, Alexander V. Suvorov 2020-11-17
10192980 Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same Saptharishi Sriram, Alexander V. Suvorov 2019-01-29
9608085 Predisposed high electron mobility transistor 2017-03-28
9306009 Mix doping of a semi-insulating Group III nitride Saptharishi Sriram 2016-04-05
8492772 Homoepitaxial growth of SiC on low off-axis SiC wafers Alexandre Ellison, Björn Magnusson, Peder Bergman 2013-07-23
7601986 Epitaxial semiconductor structures having reduced stacking fault nucleation sites Heinz Lendenmann 2009-10-13
7531433 Homoepitaxial growth of SiC on low off-axis SiC wafers Alexandre Ellison, Björn Magnusson, Peder Bergman 2009-05-12
7396410 Featuring forming methods to reduce stacking fault nucleation sites Heinz Lendenmann 2008-07-08
7226805 Sequential lithographic methods to reduce stacking fault nucleation sites Heinz Lendenmann, Joseph Sumakeris 2007-06-05
7173285 Lithographic methods to reduce stacking fault nucleation sites Heinz Lendenmann 2007-02-06
7109521 Silicon carbide semiconductor structures including multiple epitaxial layers having sidewalls Heinz Lendenmann, Joseph Sumakeris 2006-09-19
6093253 Method and a device for epitaxial growth of objects by chemical vapor deposition Peter Lofgren, Chun-Yuan Gu, Yujing Liu 2000-07-25
6048398 Device for epitaxially growing objects Asko Vehanen, Rositza Todorova Yakimova, Marko Tuominen, Olle Kordina, Erik Janzen 2000-04-11
6039812 Device for epitaxially growing objects and method for such a growth Alex Ellison, Olle Kordina, Chun-Yuan Gu, Erik Janzen, Marko Tuominen 2000-03-21
6030661 Device and a method for epitaxially growing objects by CVD Olle Kordina, Erik Janzen 2000-02-29
5792257 Method for protecting the susceptor during epitaxial growth by CVD and a device for epitaxial growth by CVD Olle Kordina, Erik Janzen 1998-08-11
5704985 Device and a method for epitaxially growing objects by CVD Olle Kordina, Erik Janzen 1998-01-06