| RE49285 |
Semiconductor device structure and methods of its production |
Jr-Tai Chen |
2022-11-08 |
| 10403746 |
Heterostructure and method of its production |
Jr-Tai Chen |
2019-09-03 |
| 10269565 |
Semiconductor device structure and methods of its production |
Jr-Tai Chen |
2019-04-23 |
| 10017877 |
Silicon carbide crystal growth in a CVD reactor using chlorinated chemistry |
Olof Kordina |
2018-07-10 |
| 7361222 |
Device and method for producing single crystals by vapor deposition |
Peter Raback, Alexandre Ellison |
2008-04-22 |
| 7018597 |
High resistivity silicon carbide single crystal |
Alexandre Ellison, Nguyen Tien Son, Björn Magnusson |
2006-03-28 |
| 6096627 |
Method for introduction of an impurity dopant in SiC, a semiconductor device formed by the method and a use of a highly doped amorphous layer as a source for dopant diffusion into SiC |
Christopher Harris, Andrei Konstantinov |
2000-08-01 |
| 6048398 |
Device for epitaxially growing objects |
Asko Vehanen, Rositza Todorova Yakimova, Marko Tuominen, Olle Kordina, Christer Hallin |
2000-04-11 |
| 6039812 |
Device for epitaxially growing objects and method for such a growth |
Alex Ellison, Olle Kordina, Chun-Yuan Gu, Christer Hallin, Marko Tuominen |
2000-03-21 |
| 6030661 |
Device and a method for epitaxially growing objects by CVD |
Olle Kordina, Christer Hallin |
2000-02-29 |
| 5900648 |
Semiconductor device having an insulated gate |
Christopher Harris, Andrei Konstantinov |
1999-05-04 |
| 5851908 |
Method for introduction of an impurity dopant in SiC, a semiconductor device formed by the method and a use of highly doped amorphous layer as a source for dopant diffusion into SiC |
Christopher Harris, Andrei Konstantinov |
1998-12-22 |
| 5847414 |
Semiconductor device having a hetero-junction between SiC and a Group 3B-nitride |
Christopher Harris, Andrey Konstantinov |
1998-12-08 |
| 5831292 |
IGBT having a vertical channel |
Christopher Harris, Andrei Konstantinov |
1998-11-03 |
| 5804482 |
Method for producing a semiconductor device having a semiconductor layer of SiC |
Andrei Konstantinov |
1998-09-08 |
| 5792257 |
Method for protecting the susceptor during epitaxial growth by CVD and a device for epitaxial growth by CVD |
Olle Kordina, Christer Hallin |
1998-08-11 |
| 5704985 |
Device and a method for epitaxially growing objects by CVD |
Olle Kordina, Christer Hallin |
1998-01-06 |
| 5654208 |
Method for producing a semiconductor device having a semiconductor layer of SiC comprising a masking step |
Christopher Harris, Andrei Konstantinov |
1997-08-05 |
| 5650638 |
Semiconductor device having a passivation layer |
Christopher Harris, Andrei Konstantinov |
1997-07-22 |
| 4893354 |
System and method for self-compensating fiber-optic data transmission at temperatures up to 200 degrees C. |
Rune Tenghamn |
1990-01-09 |