Issued Patents All Time
Showing 25 most recent of 36 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7863656 | Semiconductor device | Mietek Bakowski | 2011-01-04 |
| 7834396 | Lateral field effect transistor and its fabrication comprising a spacer layer above and below the channel layer | Andrei Konstantinov | 2010-11-16 |
| 7768092 | Semiconductor device comprising a junction having a plurality of rings | Cem Basceri | 2010-08-03 |
| 7728403 | Semiconductor device | Cem Basceri, Kent Bertilsson | 2010-06-01 |
| 7646060 | Method and device of field effect transistor including a base shorted to a source region | Andrei Konstantinov | 2010-01-12 |
| 6670705 | Protective layer for a semiconductor device | Mietek Bakowski, Jan Szmidt | 2003-12-30 |
| 6306773 | Method of producing a semiconductor device of SiC | Christian Adås, Stefan Karlsson, Andrei Konstantinov, Thomas Horman | 2001-10-23 |
| 6278133 | Field effect transistor of SiC for high temperature application, use of such a transistor and a method for production thereof | Andrei Konstantinov, Susan Savage | 2001-08-21 |
| 6252250 | High power impatt diode | Andrei Konstantinov | 2001-06-26 |
| 6150671 | Semiconductor device having high channel mobility and a high breakdown voltage for high power applications | Ulf Gustafsson, Mietek Bakowski | 2000-11-21 |
| 6127695 | Lateral field effect transistor of SiC, a method for production thereof and a use of such a transistor | Andrei Konstantinov | 2000-10-03 |
| 6104043 | Schottky diode of SiC and a method for production thereof | Willy Hermansson, Bo Bijlenga, Lennart Ramberg, Kurt Rottner, Lennart Zdansky +5 more | 2000-08-15 |
| 6096627 | Method for introduction of an impurity dopant in SiC, a semiconductor device formed by the method and a use of a highly doped amorphous layer as a source for dopant diffusion into SiC | Andrei Konstantinov, Erik Janzen | 2000-08-01 |
| 6091108 | Semiconductor device of SiC having an insulated gate and buried grid region for high breakdown voltage | Bo Bijlenga, Lennart Zdansky, Ulf Gustafsson, Mietek Bakowski, Andrey Konstantinov | 2000-07-18 |
| 6025608 | Semiconductor device of SiC with insulating layer and a refractory metal nitride layer | Erik Danielsson | 2000-02-15 |
| 5977605 | SiC Semiconductor device comprising a pn Junction with a voltage absorbing edge | Mietek Bakowsky, Bo Bijlenga, Ulf Gustafsson, Susan Savage | 1999-11-02 |
| 5967795 | SiC semiconductor device comprising a pn junction with a voltage absorbing edge | Mietek Bakowsky, Bo Bijlenga, Ulf Gustafsson, Susan Savage | 1999-10-19 |
| 5932894 | SiC semiconductor device comprising a pn junction | Mietek Bakowski, Ulf Gustafsson | 1999-08-03 |
| 5923051 | Field controlled semiconductor device of SiC and a method for production thereof | Mietek Bakowski, Ulf Gustafsson, Mats Andersson | 1999-07-13 |
| 5909039 | Insulated gate bipolar transistor having a trench | Mietek Bakowski, Ulf Gustafsson | 1999-06-01 |
| 5900648 | Semiconductor device having an insulated gate | Andrei Konstantinov, Erik Janzen | 1999-05-04 |
| 5851908 | Method for introduction of an impurity dopant in SiC, a semiconductor device formed by the method and a use of highly doped amorphous layer as a source for dopant diffusion into SiC | Andrei Konstantinov, Erik Janzen | 1998-12-22 |
| 5849620 | Method for producing a semiconductor device comprising an implantation step | Kurt Rottner | 1998-12-15 |
| 5847414 | Semiconductor device having a hetero-junction between SiC and a Group 3B-nitride | Andrey Konstantinov, Erik Janzen | 1998-12-08 |
| 5831292 | IGBT having a vertical channel | Andrei Konstantinov, Erik Janzen | 1998-11-03 |