| 7863656 |
Semiconductor device |
Christopher Harris |
2011-01-04 |
| 6670705 |
Protective layer for a semiconductor device |
Christopher Harris, Jan Szmidt |
2003-12-30 |
| 6469359 |
Semiconductor device and a method for production thereof |
Ulf Gustafsson, Heinz Lendenmann |
2002-10-22 |
| 6313488 |
Bipolar transistor having a low doped drift layer of crystalline SiC |
Bo Breitholtz, Ulf Gustafsson, Lennart Zdansky |
2001-11-06 |
| 6201280 |
Transistor of SIC |
Ulf Gustafsson |
2001-03-13 |
| 6150671 |
Semiconductor device having high channel mobility and a high breakdown voltage for high power applications |
Christopher Harris, Ulf Gustafsson |
2000-11-21 |
| 6104043 |
Schottky diode of SiC and a method for production thereof |
Willy Hermansson, Bo Bijlenga, Lennart Ramberg, Kurt Rottner, Lennart Zdansky +5 more |
2000-08-15 |
| 6091108 |
Semiconductor device of SiC having an insulated gate and buried grid region for high breakdown voltage |
Christopher Harris, Bo Bijlenga, Lennart Zdansky, Ulf Gustafsson, Andrey Konstantinov |
2000-07-18 |
| 6040237 |
Fabrication of a SiC semiconductor device comprising a pn junction with a voltage absorbing edge |
Ulf Gustafsson, Kurt Rottner, Susan Savage |
2000-03-21 |
| 6002159 |
SiC semiconductor device comprising a pn junction with a voltage absorbing edge |
Ulf Gustafsson, Kurt Rottner, Susan Savage |
1999-12-14 |
| 5932894 |
SiC semiconductor device comprising a pn junction |
Ulf Gustafsson, Christopher Harris |
1999-08-03 |
| 5923051 |
Field controlled semiconductor device of SiC and a method for production thereof |
Christopher Harris, Ulf Gustafsson, Mats Andersson |
1999-07-13 |
| 5914500 |
Junction termination for SiC Schottky diode |
Ulf Gustafsson |
1999-06-22 |
| 5909039 |
Insulated gate bipolar transistor having a trench |
Christopher Harris, Ulf Gustafsson |
1999-06-01 |
| 5902117 |
PN-diode of SiC and a method for production thereof |
Kurt Rottner, Adolf Schöner |
1999-05-11 |
| 5831287 |
Bipolar semiconductor device having semiconductor layers of SiC and a method for producing a semiconductor device of SiC |
Ulf Gustafsson, Henry Bleichner |
1998-11-03 |
| 5801836 |
Depletion region stopper for PN junction in silicon carbide |
Ulf Gustafsson |
1998-09-01 |
| 5786251 |
Method for producing a channel region layer in a voltage controlled semiconductor device |
Christopher Harris, Lennart Zdansky, Bo Bijlenga |
1998-07-28 |
| 5773849 |
Field of the invention |
Christopher Harris, Ulf Gustafsson, Mats Andersson |
1998-06-30 |
| 5763902 |
Insulated gate bipolar transistor having a trench and a method for production thereof |
Christopher Harris, Ulf Gustafsson |
1998-06-09 |
| 5663580 |
Optically triggered semiconductor device |
Christopher Harris |
1997-09-02 |