AS

Adolf Schöner

ID Ii-Vi Delaware: 11 patents #12 of 394Top 4%
AR Abb Research: 5 patents #122 of 1,276Top 10%
IM Ii-Vi Advanced Materials: 4 patents #2 of 12Top 20%
CR Cree: 1 patents #444 of 639Top 70%
Overall (All Time): #200,847 of 4,157,543Top 5%
21
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
12249630 Method for manufacturing a grid Sergey Reshanov, Nicolas Thierry-Jebali, Hossein Elahipanah 2025-03-11
12034001 Concept for silicon carbide power devices Nicolas Thierry-Jebali, Christian Vieider, Sergey Reshanov, Hossein Elahipanah, Wlodzimierz Kaplan 2024-07-09
11996330 Crystal efficient SiC device wafer production Sergey Reshanov 2024-05-28
11984497 Integration of a Schottky diode with a MOSFET Nicolas Thierry-Jebali, Hossein Elahipanah, Sergey Reshanov 2024-05-14
11923450 MOSFET in SiC with self-aligned lateral MOS channel Sergey Reshanov, Nicolas Thierry-Jebali, Hossein Elahipanah 2024-03-05
11876116 Method for manufacturing a grid Sergey Reshanov, Nicolas Thierry-Jebali, Hossein Elahipanah 2024-01-16
11869940 Feeder design with high current capability Hossein Elahipanah, Nicolas Thierry-Jebali, Sergey Reshanov 2024-01-09
11652099 Concept for silicon for carbide power devices Nicolas Thierry-Jebali, Christian Vieider, Sergey Reshanov, Hossein Elahipanah, Wlodzimierz Kaplan 2023-05-16
11581431 Integration of a Schottky diode with a MOSFET Nicolas Thierry-Jebali, Hossein Elahipanah, Sergey Reshanov 2023-02-14
11575007 Feeder design with high current capability Hossein Elahipanah, Nicolas Thierry-Jebali, Sergey Reshanov 2023-02-07
11444192 MOSFET in sic with self-aligned lateral MOS channel Sergey Reshanov, Nicolas Thierry-Jebali, Hossein Elahipanah 2022-09-13
11342423 Method for manufacturing a grid Sergey Reshanov, Nicolas Thierry-Jebali, Hossein Elahipanah 2022-05-24
11276681 Concept for silicon carbide power devices Nicolas Thierry-Jebali, Christian Vieider, Sergey Reshanov, Hossein Elahipanah, Wlodzimierz Kaplan 2022-03-15
11158706 Feeder design with high current capability Hossein Elahipanah, Nicolas Thierry-Jebali, Sergey Reshanov 2021-10-26
11114557 Integration of a Schottky diode with a MOSFET Nicolas Thierry-Jebali, Hossein Elahipanah, Sergey Reshanov 2021-09-07
6703294 Method for producing a region doped with boron in a SiC-layer Kurt Rottner 2004-03-09
6104043 Schottky diode of SiC and a method for production thereof Willy Hermansson, Bo Bijlenga, Lennart Ramberg, Kurt Rottner, Lennart Zdansky +5 more 2000-08-15
5902117 PN-diode of SiC and a method for production thereof Kurt Rottner, Mietek Bakowski 1999-05-11
5759263 Device and a method for epitaxially growing objects by cvd Nils Nordell 1998-06-02
5705406 Method for producing a semiconductor device having semiconductor layers of SiC by the use of an ion-implantation technique Kurt Rottner, Nils Nordell 1998-01-06
5674765 Method for producing a semiconductor device by the use of an implanting step Kurt Rottner 1997-10-07