Issued Patents All Time
Showing 1–21 of 21 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12249630 | Method for manufacturing a grid | Sergey Reshanov, Nicolas Thierry-Jebali, Hossein Elahipanah | 2025-03-11 |
| 12034001 | Concept for silicon carbide power devices | Nicolas Thierry-Jebali, Christian Vieider, Sergey Reshanov, Hossein Elahipanah, Wlodzimierz Kaplan | 2024-07-09 |
| 11996330 | Crystal efficient SiC device wafer production | Sergey Reshanov | 2024-05-28 |
| 11984497 | Integration of a Schottky diode with a MOSFET | Nicolas Thierry-Jebali, Hossein Elahipanah, Sergey Reshanov | 2024-05-14 |
| 11923450 | MOSFET in SiC with self-aligned lateral MOS channel | Sergey Reshanov, Nicolas Thierry-Jebali, Hossein Elahipanah | 2024-03-05 |
| 11876116 | Method for manufacturing a grid | Sergey Reshanov, Nicolas Thierry-Jebali, Hossein Elahipanah | 2024-01-16 |
| 11869940 | Feeder design with high current capability | Hossein Elahipanah, Nicolas Thierry-Jebali, Sergey Reshanov | 2024-01-09 |
| 11652099 | Concept for silicon for carbide power devices | Nicolas Thierry-Jebali, Christian Vieider, Sergey Reshanov, Hossein Elahipanah, Wlodzimierz Kaplan | 2023-05-16 |
| 11581431 | Integration of a Schottky diode with a MOSFET | Nicolas Thierry-Jebali, Hossein Elahipanah, Sergey Reshanov | 2023-02-14 |
| 11575007 | Feeder design with high current capability | Hossein Elahipanah, Nicolas Thierry-Jebali, Sergey Reshanov | 2023-02-07 |
| 11444192 | MOSFET in sic with self-aligned lateral MOS channel | Sergey Reshanov, Nicolas Thierry-Jebali, Hossein Elahipanah | 2022-09-13 |
| 11342423 | Method for manufacturing a grid | Sergey Reshanov, Nicolas Thierry-Jebali, Hossein Elahipanah | 2022-05-24 |
| 11276681 | Concept for silicon carbide power devices | Nicolas Thierry-Jebali, Christian Vieider, Sergey Reshanov, Hossein Elahipanah, Wlodzimierz Kaplan | 2022-03-15 |
| 11158706 | Feeder design with high current capability | Hossein Elahipanah, Nicolas Thierry-Jebali, Sergey Reshanov | 2021-10-26 |
| 11114557 | Integration of a Schottky diode with a MOSFET | Nicolas Thierry-Jebali, Hossein Elahipanah, Sergey Reshanov | 2021-09-07 |
| 6703294 | Method for producing a region doped with boron in a SiC-layer | Kurt Rottner | 2004-03-09 |
| 6104043 | Schottky diode of SiC and a method for production thereof | Willy Hermansson, Bo Bijlenga, Lennart Ramberg, Kurt Rottner, Lennart Zdansky +5 more | 2000-08-15 |
| 5902117 | PN-diode of SiC and a method for production thereof | Kurt Rottner, Mietek Bakowski | 1999-05-11 |
| 5759263 | Device and a method for epitaxially growing objects by cvd | Nils Nordell | 1998-06-02 |
| 5705406 | Method for producing a semiconductor device having semiconductor layers of SiC by the use of an ion-implantation technique | Kurt Rottner, Nils Nordell | 1998-01-06 |
| 5674765 | Method for producing a semiconductor device by the use of an implanting step | Kurt Rottner | 1997-10-07 |