Issued Patents All Time
Showing 25 most recent of 76 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10790811 | Cascaded bootstrapping GaN power switch and driver | Edward K. Lee, Ravi Ananth, Michael Chapman, Michael A. de Rooij | 2020-09-29 |
| 10622455 | Enhancement-mode GaN transistor with selective and nonselective etch layers for improved uniformity in GaN spacer thickness | Jianjun Cao, Guangyuan Zhao, Yoganand Saripalli, Zhikai Tang | 2020-04-14 |
| 10600674 | Semiconductor devices with back surface isolation | Alexander Lidow, Jianjun Cao, Johan Tjeerd Strydom, Alana Nakata, Guangyuan Zhao | 2020-03-24 |
| 10312131 | Semiconductor devices with back surface isolation | Alexander Lidow, Jianjun Cao, Johan Tjeerd Strydom, Alana Nakata, Guangyuan Zhao | 2019-06-04 |
| 10312260 | GaN transistors with polysilicon layers used for creating additional components | Jianjun Cao, Alexander Lidow, Alana Nakata, Guangyuan Zhao, Yanping Ma +8 more | 2019-06-04 |
| 10096702 | Multi-step surface passivation structures and methods for fabricating same | Robert Strittmatter, Chunhua Zhou, Guangyuan Zhao, Jianjun Cao | 2018-10-09 |
| 10090274 | Flip chip interconnection with reduced current density | Robert Strittmatter, Seshadri Kolluri, Jianjun Cao, Alana Nakata | 2018-10-02 |
| 9911600 | Fabrication of semiconductor device using alternating high and low temperature layers | Paul Bridger | 2018-03-06 |
| 9837438 | GaN transistors with polysilicon layers used for creating additional components | Jianjun Cao, Alexander Lidow, Alana Nakata, Guangyuan Zhao, Yanping Ma +8 more | 2017-12-05 |
| 9640649 | III-nitride power semiconductor with a field relaxation feature | — | 2017-05-02 |
| 9607876 | Semiconductor devices with back surface isolation | Alexander Lidow, Jianjun Cao, Johan Tjeerd Strydom, Alana Nakata, Guang Yuan Zhao | 2017-03-28 |
| 9583480 | Integrated circuit with matching threshold voltages and method for making same | Jianjun Cao, Alexander Lidow, Alana Nakata, Robert Strittmatter, Guangyuan Zhao +7 more | 2017-02-28 |
| 9472626 | High performance III-nitride power device | Zhi He, Jianjun Cao | 2016-10-18 |
| 9331191 | GaN device with reduced output capacitance and process for making same | Stephen L. Colino, Jianjun Cao, Alexander Lidow, Alana Nakata, Guangyuan Zhao +9 more | 2016-05-03 |
| 9214528 | Method to fabricate self-aligned isolation in gallium nitride devices and integrated circuits | Chunhua Zhou, Jianjun Cao, Alexander Lidow, Alana Nakata, Robert Strittmatter +6 more | 2015-12-15 |
| 9214461 | GaN transistors with polysilicon layers for creating additional components | Jianjun Cao, Alexander Lidow, Alana Nakata, Guangyuan Zhao, Yanping Ma +8 more | 2015-12-15 |
| 9214399 | Integrated circuit with matching threshold voltages and method for making same | Jianjun Cao, Alexander Lidow, Alana Nakata, Robert Strittmatter, Guangyuan Zhao +7 more | 2015-12-15 |
| 9171911 | Isolation structure in gallium nitride devices and integrated circuits | Chunhua Zhou, Jianjun Cao, Alexander Lidow, Alana Nakata, Robert Strittmatter +6 more | 2015-10-27 |
| 9157169 | Process for manufacture of super lattice using alternating high and low temperature layers to block parasitic current path | Paul Bridger | 2015-10-13 |
| 9142637 | III-nitride monolithic IC | Paul Bridger | 2015-09-22 |
| 9117671 | Fabrication of III-nitride semiconductor device and related structures | Michael A. Briere, Paul Bridger | 2015-08-25 |
| 9000486 | III-nitride heterojunction device | Paul Bridger | 2015-04-07 |
| 8969918 | Enhancement mode gallium nitride transistor with improved gate characteristics | Alexander Lidow, Alana Nakata, Jianjun Cao, Guang Yuan Zhao | 2015-03-03 |
| 8952352 | III-nitride power device | Zhi He, Jianjun Cao | 2015-02-10 |
| 8940567 | Method for fabricating a III-nitride semiconductor device | Zhi He, Jianjun Cao | 2015-01-27 |