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III-nitride power semiconductor with a field relaxation feature |
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2017-05-02 |
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2017-03-28 |
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Michael A. Briere, Paul Bridger |
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Paul Bridger |
2015-04-07 |
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Enhancement mode gallium nitride transistor with improved gate characteristics |
Alexander Lidow, Alana Nakata, Jianjun Cao, Guang Yuan Zhao |
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2015-02-10 |
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Method for fabricating a III-nitride semiconductor device |
Zhi He, Jianjun Cao |
2015-01-27 |
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