Issued Patents All Time
Showing 26–50 of 76 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8916908 | III-nitride heterojunction device | Paul Bridger | 2014-12-23 |
| 8890168 | Enhancement mode GaN HEMT device | Alexander Lidow, Alana Nakata, Jianjun Cao, Guang Yuang Zhao | 2014-11-18 |
| 8871581 | Enhancement mode III-nitride FET | — | 2014-10-28 |
| 8865575 | Fabrication of III-nitride semiconductor device and related structures | Michael A. Briere, Paul Bridger | 2014-10-21 |
| 8853749 | Ion implanted and self aligned gate structure for GaN transistors | Alexander Lidow, Jianjun Cao, Robert Strittmatter, Guang Yuan Zhao, Alana Nakata | 2014-10-07 |
| 8823012 | Enhancement mode GaN HEMT device with gate spacer and method for fabricating the same | Alexander Lidow, Alana Nakata, Jianjun Cao, Guang Yuan Zhao, Robert Strittmatter +1 more | 2014-09-02 |
| 8815715 | III-nitride wafer fabrication | Thomas Herman | 2014-08-26 |
| 8785974 | Bumped, self-isolated GaN transistor chip with electrically isolated back surface | Alexander Lidow, Alana Nakata, Jianjun Cao | 2014-07-22 |
| 8742450 | III-nitride multi-channel heterojunction device | — | 2014-06-03 |
| 8697581 | III-nitride semiconductor device with trench structure | Paul Bridger | 2014-04-15 |
| 8680578 | Field effect transistor with enhanced insulator structure | — | 2014-03-25 |
| 8614129 | Method for fabricating a semiconductor device | Paul Bridger, Michael A. Briere | 2013-12-24 |
| 8557681 | III-nitride wafer fabrication | Thomas Herman | 2013-10-15 |
| 8546206 | Enhancement mode III-nitride FET | — | 2013-10-01 |
| 8455920 | III-nitride heterojunction device | Paul Bridger | 2013-06-04 |
| 8450721 | III-nitride power semiconductor device | Zhi He, Jianjun Cao | 2013-05-28 |
| 8441030 | III-nitride multi-channel heterojunction interdigitated rectifier | — | 2013-05-14 |
| 8436398 | Back diffusion suppression structures | Alexander Lidow, Guang Yuan Zhao, Jianjun Cao | 2013-05-07 |
| 8431960 | Dopant diffusion modulation in GaN buffer layers | Guang Yuan Zhao | 2013-04-30 |
| 8404508 | Enhancement mode GaN HEMT device and method for fabricating the same | Alexander Lidow, Alana Nakata, Jianjun Cao, Guang Yuan Zhao | 2013-03-26 |
| 8350294 | Compensated gate MISFET and method for fabricating the same | Alexander Lidow, Jianjun Cao, Alana Nakata, Guang Yuan Zhao | 2013-01-08 |
| 8193612 | Complimentary nitride transistors vertical and common drain | Paul Bridger | 2012-06-05 |
| 8174048 | III-nitride current control device and method of manufacture | — | 2012-05-08 |
| 8174051 | III-nitride power device | Jianjun Cao, Yanping Ma, Michael A. Briere | 2012-05-08 |
| 8168000 | III-nitride semiconductor device fabrication | Mike Briere | 2012-05-01 |