| 10600674 |
Semiconductor devices with back surface isolation |
Alexander Lidow, Jianjun Cao, Robert Beach, Johan Tjeerd Strydom, Guangyuan Zhao |
2020-03-24 |
| 10312131 |
Semiconductor devices with back surface isolation |
Alexander Lidow, Jianjun Cao, Robert Beach, Johan Tjeerd Strydom, Guangyuan Zhao |
2019-06-04 |
| 10312260 |
GaN transistors with polysilicon layers used for creating additional components |
Jianjun Cao, Robert Beach, Alexander Lidow, Guangyuan Zhao, Yanping Ma +8 more |
2019-06-04 |
| 10312335 |
Gate with self-aligned ledge for enhancement mode GaN transistors |
Jianjun Cao, Alexander Lidow |
2019-06-04 |
| 10090274 |
Flip chip interconnection with reduced current density |
Robert Strittmatter, Seshadri Kolluri, Robert Beach, Jianjun Cao |
2018-10-02 |
| 9837438 |
GaN transistors with polysilicon layers used for creating additional components |
Jianjun Cao, Robert Beach, Alexander Lidow, Guangyuan Zhao, Yanping Ma +8 more |
2017-12-05 |
| 9748347 |
Gate with self-aligned ledged for enhancement mode GaN transistors |
Jianjun Cao, Alexander Lidow |
2017-08-29 |
| 9607876 |
Semiconductor devices with back surface isolation |
Alexander Lidow, Jianjun Cao, Robert Beach, Johan Tjeerd Strydom, Guang Yuan Zhao |
2017-03-28 |
| 9583480 |
Integrated circuit with matching threshold voltages and method for making same |
Jianjun Cao, Robert Beach, Alexander Lidow, Robert Strittmatter, Guangyuan Zhao +7 more |
2017-02-28 |
| 9331191 |
GaN device with reduced output capacitance and process for making same |
Stephen L. Colino, Jianjun Cao, Robert Beach, Alexander Lidow, Guangyuan Zhao +9 more |
2016-05-03 |
| 9214399 |
Integrated circuit with matching threshold voltages and method for making same |
Jianjun Cao, Robert Beach, Alexander Lidow, Robert Strittmatter, Guangyuan Zhao +7 more |
2015-12-15 |
| 9214528 |
Method to fabricate self-aligned isolation in gallium nitride devices and integrated circuits |
Chunhua Zhou, Jianjun Cao, Alexander Lidow, Robert Beach, Robert Strittmatter +6 more |
2015-12-15 |
| 9214461 |
GaN transistors with polysilicon layers for creating additional components |
Jianjun Cao, Robert Beach, Alexander Lidow, Guangyuan Zhao, Yanping Ma +8 more |
2015-12-15 |
| 9171911 |
Isolation structure in gallium nitride devices and integrated circuits |
Chunhua Zhou, Jianjun Cao, Alexander Lidow, Robert Beach, Robert Strittmatter +6 more |
2015-10-27 |
| 8969918 |
Enhancement mode gallium nitride transistor with improved gate characteristics |
Alexander Lidow, Robert Beach, Jianjun Cao, Guang Yuan Zhao |
2015-03-03 |
| 8890168 |
Enhancement mode GaN HEMT device |
Alexander Lidow, Robert Beach, Jianjun Cao, Guang Yuang Zhao |
2014-11-18 |
| 8853749 |
Ion implanted and self aligned gate structure for GaN transistors |
Alexander Lidow, Jianjun Cao, Robert Beach, Robert Strittmatter, Guang Yuan Zhao |
2014-10-07 |
| 8823012 |
Enhancement mode GaN HEMT device with gate spacer and method for fabricating the same |
Alexander Lidow, Robert Beach, Jianjun Cao, Guang Yuan Zhao, Robert Strittmatter +1 more |
2014-09-02 |
| 8785974 |
Bumped, self-isolated GaN transistor chip with electrically isolated back surface |
Alexander Lidow, Robert Beach, Jianjun Cao |
2014-07-22 |
| 8404508 |
Enhancement mode GaN HEMT device and method for fabricating the same |
Alexander Lidow, Robert Beach, Jianjun Cao, Guang Yuan Zhao |
2013-03-26 |
| 8350294 |
Compensated gate MISFET and method for fabricating the same |
Alexander Lidow, Robert Beach, Jianjun Cao, Guang Yuan Zhao |
2013-01-08 |
| 8102668 |
Semiconductor device package with internal device protection |
Henning M. Hauenstein |
2012-01-24 |