Issued Patents All Time
Showing 25 most recent of 42 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11050339 | Integrated circuit with multiple gallium nitride transistor sets | David C. Reusch, Jianjun Cao | 2021-06-29 |
| 10600674 | Semiconductor devices with back surface isolation | Jianjun Cao, Robert Beach, Johan Tjeerd Strydom, Alana Nakata, Guangyuan Zhao | 2020-03-24 |
| 10601300 | Integrated gallium nitride based DC-DC converter | David C. Reusch, Jianjun Cao | 2020-03-24 |
| 10312335 | Gate with self-aligned ledge for enhancement mode GaN transistors | Jianjun Cao, Alana Nakata | 2019-06-04 |
| 10312131 | Semiconductor devices with back surface isolation | Jianjun Cao, Robert Beach, Johan Tjeerd Strydom, Alana Nakata, Guangyuan Zhao | 2019-06-04 |
| 10312260 | GaN transistors with polysilicon layers used for creating additional components | Jianjun Cao, Robert Beach, Alana Nakata, Guangyuan Zhao, Yanping Ma +8 more | 2019-06-04 |
| 9837438 | GaN transistors with polysilicon layers used for creating additional components | Jianjun Cao, Robert Beach, Alana Nakata, Guangyuan Zhao, Yanping Ma +8 more | 2017-12-05 |
| 9748347 | Gate with self-aligned ledged for enhancement mode GaN transistors | Jianjun Cao, Alana Nakata | 2017-08-29 |
| 9607876 | Semiconductor devices with back surface isolation | Jianjun Cao, Robert Beach, Johan Tjeerd Strydom, Alana Nakata, Guang Yuan Zhao | 2017-03-28 |
| 9583480 | Integrated circuit with matching threshold voltages and method for making same | Jianjun Cao, Robert Beach, Alana Nakata, Robert Strittmatter, Guangyuan Zhao +7 more | 2017-02-28 |
| 9331191 | GaN device with reduced output capacitance and process for making same | Stephen L. Colino, Jianjun Cao, Robert Beach, Alana Nakata, Guangyuan Zhao +9 more | 2016-05-03 |
| 9214461 | GaN transistors with polysilicon layers for creating additional components | Jianjun Cao, Robert Beach, Alana Nakata, Guangyuan Zhao, Yanping Ma +8 more | 2015-12-15 |
| 9214528 | Method to fabricate self-aligned isolation in gallium nitride devices and integrated circuits | Chunhua Zhou, Jianjun Cao, Robert Beach, Alana Nakata, Robert Strittmatter +6 more | 2015-12-15 |
| 9214399 | Integrated circuit with matching threshold voltages and method for making same | Jianjun Cao, Robert Beach, Alana Nakata, Robert Strittmatter, Guangyuan Zhao +7 more | 2015-12-15 |
| 9171911 | Isolation structure in gallium nitride devices and integrated circuits | Chunhua Zhou, Jianjun Cao, Robert Beach, Alana Nakata, Robert Strittmatter +6 more | 2015-10-27 |
| 8969918 | Enhancement mode gallium nitride transistor with improved gate characteristics | Robert Beach, Alana Nakata, Jianjun Cao, Guang Yuan Zhao | 2015-03-03 |
| 8890168 | Enhancement mode GaN HEMT device | Robert Beach, Alana Nakata, Jianjun Cao, Guang Yuang Zhao | 2014-11-18 |
| 8853749 | Ion implanted and self aligned gate structure for GaN transistors | Jianjun Cao, Robert Beach, Robert Strittmatter, Guang Yuan Zhao, Alana Nakata | 2014-10-07 |
| 8823012 | Enhancement mode GaN HEMT device with gate spacer and method for fabricating the same | Robert Beach, Alana Nakata, Jianjun Cao, Guang Yuan Zhao, Robert Strittmatter +1 more | 2014-09-02 |
| 8785974 | Bumped, self-isolated GaN transistor chip with electrically isolated back surface | Robert Beach, Alana Nakata, Jianjun Cao | 2014-07-22 |
| 8436398 | Back diffusion suppression structures | Robert Beach, Guang Yuan Zhao, Jianjun Cao | 2013-05-07 |
| 8404508 | Enhancement mode GaN HEMT device and method for fabricating the same | Robert Beach, Alana Nakata, Jianjun Cao, Guang Yuan Zhao | 2013-03-26 |
| 8368120 | Hybrid semiconductor device having a GaN transistor and a silicon MOSFET | Daniel M. Kinzer, Srikant Sridevan | 2013-02-05 |
| 8350294 | Compensated gate MISFET and method for fabricating the same | Robert Beach, Jianjun Cao, Alana Nakata, Guang Yuan Zhao | 2013-01-08 |
| 8017978 | Hybrid semiconductor device | Daniel M. Kinzer, Srikant Sridevan | 2011-09-13 |