| 11050339 |
Integrated circuit with multiple gallium nitride transistor sets |
David C. Reusch, Jianjun Cao |
2021-06-29 |
|
| 10600674 |
Semiconductor devices with back surface isolation |
Jianjun Cao, Robert Beach, Johan Tjeerd Strydom, Alana Nakata, Guangyuan Zhao |
2020-03-24 |
|
| 10601300 |
Integrated gallium nitride based DC-DC converter |
David C. Reusch, Jianjun Cao |
2020-03-24 |
|
| 10312335 |
Gate with self-aligned ledge for enhancement mode GaN transistors |
Jianjun Cao, Alana Nakata |
2019-06-04 |
|
| 10312131 |
Semiconductor devices with back surface isolation |
Jianjun Cao, Robert Beach, Johan Tjeerd Strydom, Alana Nakata, Guangyuan Zhao |
2019-06-04 |
|
| 10312260 |
GaN transistors with polysilicon layers used for creating additional components |
Jianjun Cao, Robert Beach, Alana Nakata, Guangyuan Zhao, Yanping Ma +8 more |
2019-06-04 |
|
| 9837438 |
GaN transistors with polysilicon layers used for creating additional components |
Jianjun Cao, Robert Beach, Alana Nakata, Guangyuan Zhao, Yanping Ma +8 more |
2017-12-05 |
|
| 9748347 |
Gate with self-aligned ledged for enhancement mode GaN transistors |
Jianjun Cao, Alana Nakata |
2017-08-29 |
|
| 9607876 |
Semiconductor devices with back surface isolation |
Jianjun Cao, Robert Beach, Johan Tjeerd Strydom, Alana Nakata, Guang Yuan Zhao |
2017-03-28 |
|
| 9583480 |
Integrated circuit with matching threshold voltages and method for making same |
Jianjun Cao, Robert Beach, Alana Nakata, Robert Strittmatter, Guangyuan Zhao +7 more |
2017-02-28 |
|
| 9331191 |
GaN device with reduced output capacitance and process for making same |
Stephen L. Colino, Jianjun Cao, Robert Beach, Alana Nakata, Guangyuan Zhao +9 more |
2016-05-03 |
|
| 9214461 |
GaN transistors with polysilicon layers for creating additional components |
Jianjun Cao, Robert Beach, Alana Nakata, Guangyuan Zhao, Yanping Ma +8 more |
2015-12-15 |
|
| 9214528 |
Method to fabricate self-aligned isolation in gallium nitride devices and integrated circuits |
Chunhua Zhou, Jianjun Cao, Robert Beach, Alana Nakata, Robert Strittmatter +6 more |
2015-12-15 |
|
| 9214399 |
Integrated circuit with matching threshold voltages and method for making same |
Jianjun Cao, Robert Beach, Alana Nakata, Robert Strittmatter, Guangyuan Zhao +7 more |
2015-12-15 |
|
| 9171911 |
Isolation structure in gallium nitride devices and integrated circuits |
Chunhua Zhou, Jianjun Cao, Robert Beach, Alana Nakata, Robert Strittmatter +6 more |
2015-10-27 |
|
| 8969918 |
Enhancement mode gallium nitride transistor with improved gate characteristics |
Robert Beach, Alana Nakata, Jianjun Cao, Guang Yuan Zhao |
2015-03-03 |
|
| 8890168 |
Enhancement mode GaN HEMT device |
Robert Beach, Alana Nakata, Jianjun Cao, Guang Yuang Zhao |
2014-11-18 |
|
| 8853749 |
Ion implanted and self aligned gate structure for GaN transistors |
Jianjun Cao, Robert Beach, Robert Strittmatter, Guang Yuan Zhao, Alana Nakata |
2014-10-07 |
|
| 8823012 |
Enhancement mode GaN HEMT device with gate spacer and method for fabricating the same |
Robert Beach, Alana Nakata, Jianjun Cao, Guang Yuan Zhao, Robert Strittmatter +1 more |
2014-09-02 |
|
| 8785974 |
Bumped, self-isolated GaN transistor chip with electrically isolated back surface |
Robert Beach, Alana Nakata, Jianjun Cao |
2014-07-22 |
|
| 8436398 |
Back diffusion suppression structures |
Robert Beach, Guang Yuan Zhao, Jianjun Cao |
2013-05-07 |
|
| 8404508 |
Enhancement mode GaN HEMT device and method for fabricating the same |
Robert Beach, Alana Nakata, Jianjun Cao, Guang Yuan Zhao |
2013-03-26 |
|
| 8368120 |
Hybrid semiconductor device having a GaN transistor and a silicon MOSFET |
Daniel M. Kinzer, Srikant Sridevan |
2013-02-05 |
$2,058,000 |
| 8350294 |
Compensated gate MISFET and method for fabricating the same |
Robert Beach, Jianjun Cao, Alana Nakata, Guang Yuan Zhao |
2013-01-08 |
|
| 8017978 |
Hybrid semiconductor device |
Daniel M. Kinzer, Srikant Sridevan |
2011-09-13 |
$1,828,000 |