Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Hybrid semiconductor device having a GaN transistor and a silicon MOSFET

Hybrid semiconductor device having a GaN transistor and a silicon MOSFET

US Patent 8368120 · Granted Feb 5, 2013

Estimated economic value: $2,058,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Transistor DV/DT control circuit2025
Monolithic high side gallium nitride device with integrated capacitive level shi2025
Circuits and methods for controlling a voltage of a semiconductor substrate2025
Integrated half-bridge power converter2025
Thermally enhanced electronic packages for GaN power integrated circuits2025
Integrated gallium nitride power device with protection circuits2025
Electronic packages with integral heat spreaders2025
Electronic packages with integral heat spreaders2025
Integrated power device with energy harvesting gate driver2024
Circuits and methods for controlling a voltage of a semiconductor substrate2024
Half-bridge circuit using monolithic flip-chip GaN power devices2024
Circuits and methods for controlling a voltage of a semiconductor substrate2024