Issued Patents All Time
Showing 26–42 of 42 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7955969 | Ultra thin FET | Daniel M. Kinzer, Michael A. Briere | 2011-06-07 |
| 5742087 | High power MOSFET with low on-resistance and high breakdown voltage | Thomas Herman | 1998-04-21 |
| 5598018 | High power MOSFET with low on-resistance and high breakdown voltage | Thomas Herman | 1997-01-28 |
| 5338961 | High power MOSFET with low on-resistance and high breakdown voltage | Thomas Herman | 1994-08-16 |
| 5191396 | High power MOSFET with low on-resistance and high breakdown voltage | Thomas Herman | 1993-03-02 |
| 5130767 | Plural polygon source pattern for mosfet | Thomas Herman, Vladimir Rumennik | 1992-07-14 |
| 5008725 | Plural polygon source pattern for MOSFET | Thomas Herman, Vladimir Rumennik | 1991-04-16 |
| 4959699 | High power MOSFET with low on-resistance and high breakdown voltage | Thomas Herman | 1990-09-25 |
| 4789882 | High power MOSFET with direct connection from connection pads to underlying silicon | — | 1988-12-06 |
| 4705759 | High power MOSFET with low on-resistance and high breakdown voltage | Thomas Herman | 1987-11-10 |
| 4680853 | Process for manufacture of high power MOSFET with laterally distributed high carrier density beneath the gate oxide | Thomas Herman | 1987-07-21 |
| 4642666 | High power MOSFET with low on-resistance and high breakdown voltage | Thomas Herman | 1987-02-10 |
| 4593302 | Process for manufacture of high power MOSFET with laterally distributed high carrier density beneath the gate oxide | Thomas Herman | 1986-06-03 |
| 4416708 | Method of manufacture of high speed, high power bipolar transistor | Edgar Abdoulin | 1983-11-22 |
| 4412242 | Planar structure for high voltage semiconductor devices with gaps in glassy layer over high field regions | Thomas Herman | 1983-10-25 |
| 4399449 | Composite metal and polysilicon field plate structure for high voltage semiconductor devices | Thomas Herman | 1983-08-16 |
| 4376286 | High power MOSFET with low on-resistance and high breakdown voltage | Thomas Herman | 1983-03-08 |