Issued Patents All Time
Showing 25 most recent of 113 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12191302 | III-nitride device | — | 2025-01-07 |
| 11605628 | Integrated III-nitride and silicon device | — | 2023-03-14 |
| 10269903 | Semiconductor structure having graded transition bodies | — | 2019-04-23 |
| 10084047 | Group III-V device structure with variable impurity concentration | — | 2018-09-25 |
| 10074729 | Forming highly conductive source/drain contacts in III-Nitride transistors | — | 2018-09-11 |
| 9837495 | III-nitride semiconductor structures with strain absorbing interlayers | — | 2017-12-05 |
| 9831312 | Group III-V device structure having a selectively reduced impurity concentration | — | 2017-11-28 |
| 9793259 | Integrated semiconductor device | — | 2017-10-17 |
| 9721791 | Method of fabricating III-nitride semiconductor dies | — | 2017-08-01 |
| 9691889 | Integrated power device | — | 2017-06-27 |
| 9673286 | Group III-V transistor with semiconductor field plate | — | 2017-06-06 |
| 9577612 | Power converter with split voltage supply | Jason Zhang, Hamid Tony Bahramian | 2017-02-21 |
| 9564498 | Transistor with elevated drain termination | Reenu Garg | 2017-02-07 |
| 9564492 | Group III-V device with a selectively modified impurity concentration | — | 2017-02-07 |
| 9530877 | Enhancement mode III-nitride transistor | — | 2016-12-27 |
| 9525052 | Active area shaping of III-nitride devices utilizing a field plate defined by a dielectric body | — | 2016-12-20 |
| 9502296 | Preventing delamination and cracks in fabrication of group III-V devices | — | 2016-11-22 |
| 9502398 | Composite device with integrated diode | — | 2016-11-22 |
| 9490172 | Method for preventing delamination and cracks in group III-V wafers | — | 2016-11-08 |
| 9461463 | DC/DC converter with III-nitride switches | Jason Zhang, Bo Yang | 2016-10-04 |
| 9449899 | Semiconductor package with heat spreader | Chuan Cheah, Kunzhong Hu | 2016-09-20 |
| 9437685 | Group III-V device with a selectively reduced impurity concentration | — | 2016-09-06 |
| 9406674 | Integrated III-nitride D-mode HFET with cascoded pair half bridge | — | 2016-08-02 |
| 9379231 | Transistor having increased breakdown voltage | Naresh Thapar, Reenu Garg | 2016-06-28 |
| 9378965 | Highly conductive source/drain contacts in III-nitride transistors | — | 2016-06-28 |