MB

Michael A. Briere

IR International Rectifier: 65 patents #3 of 432Top 1%
Infineon Technologies Ag: 43 patents #2 of 184Top 2%
PI Picor: 4 patents #3 of 12Top 25%
VL Vlt: 1 patents #35 of 52Top 70%
📍 Manhattan Beach, CA: #3 of 861 inventorsTop 1%
🗺 California: #1,758 of 386,348 inventorsTop 1%
Overall (All Time): #11,152 of 4,157,543Top 1%
113
Patents All Time

Issued Patents All Time

Showing 51–75 of 113 patents

Patent #TitleCo-InventorsDate
9087812 Composite semiconductor device with integrated diode 2015-07-21
9076853 High voltage rectifier and switching circuits Naresh Thapar 2015-07-07
9070755 Transistor having elevated drain finger termination Reenu Garg 2015-06-30
9041067 Integrated half-bridge circuit with low side and high side composite switches 2015-05-26
9000746 Power converter with split power supply Jason Zhang, HamidTony Bahramian 2015-04-07
8988133 Nested composite switch 2015-03-24
8987784 Active area shaping of III-nitride devices utilizing multiple dielectric materials 2015-03-24
8987833 Stacked composite device including a group III-V transistor and a group IV lateral transistor Tim McDonald 2015-03-24
8981380 Monolithic integration of silicon and group III-V devices 2015-03-17
8969881 Power transistor having segmented gate Naresh Thapar 2015-03-03
8957454 III-Nitride semiconductor structures with strain absorbing interlayer transition modules 2015-02-17
8946778 Active area shaping of III-nitride devices utilizing steps of source-side and drain-side field plates 2015-02-03
8865575 Fabrication of III-nitride semiconductor device and related structures Robert Beach, Paul Bridger 2014-10-21
8866193 Method for fabricating a monolithic integrated composite group III-V and group IV semiconductor device 2014-10-21
8860085 III-nitride semiconductor device 2014-10-14
8859345 Method for fabrication of III-nitride heterojunction semiconductor device 2014-10-14
8853744 Power device with solderable front metal Chuan Cheah 2014-10-07
8809909 High voltage III-nitride transistor 2014-08-19
8803199 III-nitride semiconductor device with stepped gate Paul Bridger, Jianjun Cao 2014-08-12
8796738 Group III-V device structure having a selectively reduced impurity concentration 2014-08-05
8791503 III-nitride semiconductor device with reduced electric field between gate and drain and process for its manufacture 2014-07-29
8729644 Programmable III-nitride semiconductor device 2014-05-20
8729561 P type III-nitride materials and formation thereof 2014-05-20
8692219 Method and apparatus for growing a III-nitride layer 2014-04-08
8680579 Individually controlled multiple III-nitride half bridges 2014-03-25