Issued Patents All Time
Showing 51–75 of 378 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10937807 | Ferroelectric field-effect transistor devices having a top gate and a bottom gate | Kaan Oguz, Ricky TSENG, Kevin P. O'Brien | 2021-03-02 |
| 10897009 | Resistive memory cells and precursors thereof, methods of making the same, and devices including the same | Niloy Mukherjee, Ravi Pillarisetty, Prashant Majhi, Uday Shah, Ryan E. Arch +6 more | 2021-01-19 |
| 10878871 | Spin transfer torque memory (STTM) devices with decreased critical current and computing device comprising the same | Prashant Majhi, Kaan Oguz, Kevin P. O'Brien, Abhishek A. Sharma, David L. Kencke | 2020-12-29 |
| 10868233 | Approaches for strain engineering of perpendicular magnetic tunnel junctions (pMTJs) and the resulting structures | Daniel G. Ouellette, Christopher J. Wiegand, MD Tofizur Rahman, Brian Maertz, Oleg Golonzka +5 more | 2020-12-15 |
| 10847714 | PSTTM device with multi-layered filter stack | Kaan Oguz, Kevin P. O'Brien, Christopher J. Wiegand, MD Tofizur Rahman, Mark L. Doczy +3 more | 2020-11-24 |
| 10832847 | Low stray field magnetic memory | Kaan Oguz, Kevin P. O'Brien, David L. Kencke, Charles C. Kuo, Mark L. Doczy +2 more | 2020-11-10 |
| 10832749 | Perpendicular magnetic memory with symmetric fixed layers | Charles C. Kuo, Justin S. Brockman, Juan G. Alzate Vinasco, Kaan Oguz, Kevin P. O'Brien +3 more | 2020-11-10 |
| 10811336 | Temperature management of electronic circuitry of electronic devices, memory devices, and computing devices | Ravi Pillarisetty, Abhishek A. Sharma, Elijah V. Karpov, Prashant Majhi | 2020-10-20 |
| 10804460 | Device, system and method for improved magnetic anisotropy of a magnetic tunnel junction | MD Tofizur Rahman, Christopher J. Wiegand, Brian Maertz, Daniel G. Ouellette, Kevin P. O'Brien +6 more | 2020-10-13 |
| 10770651 | Perpendicular spin transfer torque memory (PSTTM) devices with enhanced perpendicular anisotropy and methods to form same | MD Tofizur Rahman, Christopher J. Wiegand, Kaan Oguz, Daniel G. Ouellette, Brian Maertz +4 more | 2020-09-08 |
| 10732217 | Ferromagnetic resonance testing of buried magnetic layers of whole wafer | Kevin P. O'Brien, Kaan Oguz, Christopher J. Wiegand, Mark L. Doczy, MD Tofizur Rahman +2 more | 2020-08-04 |
| 10707409 | Techniques for forming spin-transfer torque memory having a dot-contacted free magnetic layer | Charles C. Kuo, Kaan Oguz, Mark L. Doczy, David L. Kencke, Satyarth Suri +1 more | 2020-07-07 |
| 10636960 | Strained perpendicular magnetic tunnel junction devices | Prashanth P. Madras, MD Tofizur Rahman, Christopher J. Wiegand, Brian Maertz, Oleg Golonzka +4 more | 2020-04-28 |
| 10580975 | Spin transfer torque memory (STTM), methods of forming the same using volatile compound forming elements, and devices including the same | Mark L. Doczy, Charles C. Kuo, Kaan Oguz, Kevin P. O'Brien, Satyarth Suri +1 more | 2020-03-03 |
| 10580973 | Spin-transfer torque memory (STTM) devices having magnetic contacts | Kaan Oguz, Charles C. Kuo, Mark L. Doczy, Satyarth Suri, David L. Kencke +2 more | 2020-03-03 |
| 10580970 | PSTTM device with free magnetic layers coupled through a metal layer having high temperature stability | Kaan Oguz, Kevin P. O'Brien, Christopher J. Wiegand, Tofizur Rahman, Mark L. Doczy +3 more | 2020-03-03 |
| 10559744 | Texture breaking layer to decouple bottom electrode from PMTJ device | Brian Maertz, Christopher J. Wiegand, Daniel G. Oeullette, MD Tofizur Rahman, Oleg Golonzka +5 more | 2020-02-11 |
| 10541014 | Memory cells with enhanced tunneling magnetoresistance ratio, memory devices and systems including the same | Elijah V. Karpov, Kaan Oguz, Kevin P. O'Brien, Charles C. Kuo, Mark L. Doczy +2 more | 2020-01-21 |
| 10522739 | Perpendicular magnetic memory with reduced switching current | Kaan Oguz, Kevin P. O'Brien, David L. Kencke, Charles C. Kuo, Robert S. Chau | 2019-12-31 |
| 10516109 | Resistive memory cells and precursors thereof, methods of making the same, and devices including the same | Niloy Mukherjee, Ravi Pillarisetty, Prashant Majhi, Uday Shah, Ryan E. Arch +6 more | 2019-12-24 |
| 10504962 | Unipolar current switching in perpendicular magnetic tunnel junction (pMTJ) devices through reduced bipolar coercivity | Charles C. Kuo, Mark L. Doczy, Kaan Oguz, Kevin P. O'Brien | 2019-12-10 |
| 10439134 | Techniques for forming non-planar resistive memory cells | Prashant Majhi, Elijah V. Karpov, Uday Shah, Niloy Mukherjee, Charles C. Kuo +2 more | 2019-10-08 |
| 10418415 | Interconnect capping process for integration of MRAM devices and the resulting structures | Christopher J. Wiegand, Oleg Golonzka, MD Tofizur Rahman, Mark L. Doczy, Kevin P. O'Brien +3 more | 2019-09-17 |
| 10411068 | Electrical contacts for magnetoresistive random access memory devices | Christopher J. Wiegand, Oleg Golonzka, Kaan Oguz, Kevin P. O'Brien, Tofizur Rahman +2 more | 2019-09-10 |
| 10403811 | Magnetic diffusion barriers and filter in PSTTM MTJ construction | Kevin P. O'Brien, Kaan Oguz, Mark L. Doczy, Charles C. Kuo, Robert S. Chau | 2019-09-03 |