Issued Patents All Time
Showing 126–137 of 137 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8138029 | Structure and method having asymmetrical junction or reverse halo profile for semiconductor on insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) | Huilong Zhu, Zhijiong Luo, Haizhou Yin | 2012-03-20 |
| 8110465 | Field effect transistor having an asymmetric gate electrode | Huilong Zhu | 2012-02-07 |
| 8105887 | Inducing stress in CMOS device | Zhijiong Luo, Haizhou Yin, Huilong Zhu | 2012-01-31 |
| 7897468 | Device having self-aligned double gate formed by backside engineering, and device having super-steep retrograded island | Zhijiong Luo, Haizhou Yin, Huilong Zhu | 2011-03-01 |
| 7880238 | 2-T SRAM cell structure and method | Werner Rausch, Huilong Zhu | 2011-02-01 |
| 7863143 | High performance schottky-barrier-source asymmetric MOSFETs | Huilong Zhu, Gregory G. Freeman | 2011-01-04 |
| 7838913 | Hybrid FET incorporating a finFET and a planar FET | Kangguo Cheng, Huilong Zhu | 2010-11-23 |
| 7829939 | MOSFET including epitaxial halo region | Huilong Zhu, Jing Wang | 2010-11-09 |
| 7820530 | Efficient body contact field effect transistor with reduced body resistance | Byoung W. Min, Stefan Zollner | 2010-10-26 |
| 7813162 | SRAM cell having asymmetric pass gates | Huilong Zhu | 2010-10-12 |
| 7670896 | Method and structure for reducing floating body effects in MOSFET devices | Huilong Zhu | 2010-03-02 |
| 7646039 | SOI field effect transistor having asymmetric junction leakage | Huilong Zhu, Zhijiong Luo | 2010-01-12 |