Issued Patents All Time
Showing 26–43 of 43 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6566187 | DRAM cell system and method for producing same | Josef Willer, Franz Hoffmann | 2003-05-20 |
| 6538273 | Ferroelectric transistor and method for fabricating it | Josef Willer, Georg Braun, Thomas Haneder | 2003-03-25 |
| 6534820 | Integrated dynamic memory cell having a small area of extent, and a method for its production | Franz Hofmann, Wolfgang Krautschneider | 2003-03-18 |
| 6521935 | Mos transistor and dram cell configuration | Wolfgang Krautschneider, Josef Willer | 2003-02-18 |
| 6518613 | Memory cell configuration with capacitor on opposite surface of substrate and method for fabricating the same | Josef Willer, Hans Reisinger, Reinhard Stengl | 2003-02-11 |
| 6512259 | Capacitor with high-&egr; dielectric or ferroelectric material based on the fin stack principle | Gerrit Lange | 2003-01-28 |
| 6504200 | DRAM cell configuration and fabrication method | Bernhard Sell, Josef Willer | 2003-01-07 |
| 6462979 | Integrated memory having memory cells with magnetoresistive storage effect | Roland Thewes | 2002-10-08 |
| 6448600 | DRAM cell configuration and fabrication method | Franz Hofmann, Josef Willer | 2002-09-10 |
| 6445609 | Integrated DRAM memory cell and DRAM memory | Alexander Frey, Werner Weber | 2002-09-03 |
| 6442065 | Method for operating a memory cell configuration having dynamic gain memory cells | Franz Hofmann, Wolfgang Krautschneider, Josef Willer | 2002-08-27 |
| 6438022 | Memory cell configuration | Wolfgang Krautschneider, Franz Hofmann, Thomas Haneder | 2002-08-20 |
| 6421271 | MRAM configuration | Dietmar Gogl | 2002-07-16 |
| 6399433 | Method for fabricating a memory cell | Franz Hofmann, Wolfgang Krautschneider, Josef Willer | 2002-06-04 |
| 6274453 | Memory cell configuration and production process therefor | Franz Hofmann, Wolfgang Krautschneider | 2001-08-14 |
| 6258658 | Memory cell configuration and corresponding fabrication method | Thomas Böhm, Volker Weinrich, Manfred Hain, Armin Kohlhase, Yoichi Otani +1 more | 2001-07-10 |
| 6258656 | Capacitor with high-.epsilon. dielectric or ferroelectric material based on the fin stack principle and production process using a negative mold | Gerrit Lange | 2001-07-10 |
| 6229169 | Memory cell configuration, method for fabricating it and methods for operating it | Franz Hofmann, Wolfgang Krautschneider, Wolfgang Rosner, Lothar Risch, Paul-Werner Basse | 2001-05-08 |