Issued Patents All Time
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7618867 | Method of forming a doped portion of a semiconductor and method of forming a transistor | Tobias Mono, Frank Jakubowski, Hermann Sachse, Lars Voelkel, Dietmar Henke | 2009-11-17 |
| 7452821 | Method for the formation of contact holes for a number of contact regions for components integrated in a substrate | Ulrike Gruening-von Schwerin, Wolfgang Gustin | 2008-11-18 |
| 7122434 | Method for generating an electrical contact with buried track conductors | Christoph Ludwig, Christoph Kutter | 2006-10-17 |
| 7030017 | Method for the planarization of a semiconductor structure | Mark Hollatz, Alexander Truby, Dirk Tobben | 2006-04-18 |
| 6909153 | Semiconductor structure having buried track conductors, and method for generating an electrical contact with buried track conductors | Christoph Ludwig, Christoph Kutter | 2005-06-21 |
| 6828191 | Trench capacitor with an insulation collar and method for producing a trench capacitor | Kai Wurster, Martin Schrems, Jurgen Faul, Alexandra Lamprecht, Odile Dequiedt | 2004-12-07 |
| 6548850 | Trench capacitor configuration and method of producing it | Stefan Gernhard, Martin Schrems | 2003-04-15 |
| 6544856 | Method for increasing the trench capacitance | Irene Sperl, Klaus Penner | 2003-04-08 |
| 6509599 | Trench capacitor with insulation collar and method for producing the trench capacitor | Kai Wurster, Martin Schrems, Jurgen Faul, Alexandra Lamprecht, Odile Dequiedt | 2003-01-21 |
| 6329703 | Contact between a monocrystalline silicon region and a polycrystalline silicon structure and method for producing such a contact | Martin Schrems, Kai Wurster, Joachim Hoepfner | 2001-12-11 |
| 6068928 | Method for producing a polycrystalline silicon structure and polycrystalline silicon layer to be produced by the method | Martin Schrems, Kai Wurster, Joachim Hoepfner | 2000-05-30 |