DP

Dethard Peters

Infineon Technologies Ag: 51 patents #60 of 7,486Top 1%
SK Siced Electronics Development Gmbh & Co. Kg: 6 patents #5 of 16Top 35%
IA Infineon Technologies Austria Ag: 5 patents #225 of 1,126Top 20%
SA Siemens Aktiengesellschaft: 2 patents #6,658 of 22,248Top 30%
Overall (All Time): #33,407 of 4,157,543Top 1%
65
Patents All Time

Issued Patents All Time

Showing 51–65 of 65 patents

Patent #TitleCo-InventorsDate
9577073 Method of forming a silicon-carbide device with a shielded gate Romain Esteve, Wolfgang Bergner, Ralf Siemieniec, Thomas Aichinger, Daniel Kueck 2017-02-21
9478655 Semiconductor device having a lower diode region arranged below a trench Ralf Siemieniec, Wolfgang Bergner, Romain Esteve 2016-10-25
9293558 Semiconductor device Ralf Siemieniec, Romain Esteve 2016-03-22
8854087 Electronic circuit with a reverse conducting transistor device Ralf Siemieniec, Peter Friedrichs 2014-10-07
8637922 Semiconductor device Ralf Siemieniec, Peter Friedrichs 2014-01-28
8102012 Transistor component having a shielding structure Peter Friedrichs, Rudolf Elpelt, Larissa Wehrhahn-Kilian, Michael Treu, Roland Rupp 2012-01-24
7646026 SiC-PN power diode Peter Friedrichs, Reinhold Schorner, Dietrich Stephani 2010-01-12
6936850 Semiconductor device made from silicon carbide with a Schottky contact and an ohmic contact made from a nickel-aluminum material Peter Friedrichs, Reinhold Schoerner 2005-08-30
6815351 Method for contacting a semiconductor configuration Peter Friedrichs, Reinhold Schorner 2004-11-09
6667495 Semiconductor configuration with ohmic contact-connection and method for contact-connecting a semiconductor configuration Peter Friedrichs, Reinhold Schorner 2003-12-23
6316791 Semiconductor structure having a predetermined alpha-silicon carbide region, and use of this semiconductor structure Reinhold Schorner, Dietrich Stephani, Peter Friedrichs 2001-11-13
6225680 Semiconductor structure based on silicon carbide material, with a plurality electrically different partial regions Reinhold Schorner 2001-05-01
6204135 Method for patterning semiconductors with high precision, good homogeneity and reproducibility Reinhold Schorner 2001-03-20
6097039 Silicon carbide semiconductor configuration with a high degree of channel mobility Reinhold Schorner, Dietrich Stephani 2000-08-01
5693234 Method for producing at least one recess in a surface of a substrate apparatus for carrying out the said method and use of the product thus obtained 1997-12-02