Issued Patents All Time
Showing 101–122 of 122 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7105889 | Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high k dielectrics | Nestor A. Bojarczuk, Cyril Cabral, Jr., Eduard A. Cartier, Matthew W. Copel, Martin M. Frank +4 more | 2006-09-12 |
| 7078301 | Rare earth metal oxide memory element based on charge storage and method for manufacturing same | Nestor A. Bojarczuk, Eduard A. Cartier | 2006-07-18 |
| 6933566 | Method of forming lattice-matched structure on silicon and structure formed thereby | Nestor A. Bojarczuk, Matthew W. Copel, Vijay Narayanan | 2005-08-23 |
| 6894338 | Rare earth metal oxide memory element based on charge storage and method for manufacturing same | Nestor A. Bojarczuk, Eduard A. Cartier | 2005-05-17 |
| 6891231 | Complementary metal oxide semiconductor (CMOS) gate stack with high dielectric constant gate dielectric and integrated diffusion barrier | Nestor A. Bojarczuk, Kevin K. Chan, Christopher P. D'Emic, Evgeni Gousev, Paul C. Jamison +1 more | 2005-05-10 |
| 6861728 | Dielectric stack without interfacial layer | Nestor A. Bojarczuk, Eduard A. Cartier, Matthew W. Copel | 2005-03-01 |
| 6852575 | Method of forming lattice-matched structure on silicon and structure formed thereby | Nestor A. Bojarczuk, Douglas A. Buchanan, Vijay Narayanan, Lars-Ake Ragnarsson | 2005-02-08 |
| 6831339 | Aluminum nitride and aluminum oxide/aluminum nitride heterostructure gate dielectric stack based field effect transistors and method for forming same | Nestor A. Bojarczuk, Eduard A. Cartier, Lars-Ake Ragnarsson | 2004-12-14 |
| 6541079 | Engineered high dielectric constant oxide and oxynitride heterostructure gate dielectrics by an atomic beam deposition technique | Nestor A. Bojarczuk, Eduard A. Cartier | 2003-04-01 |
| 6528374 | Method for forming dielectric stack without interfacial layer | Nestor A. Bojarczuk, Eduard A. Cartier, Matthew W. Copel | 2003-03-04 |
| 6333067 | Selective growth of ferromagnetic films | Nestor A. Bojarczuk, Peter Richard Duncombe, Arunava Gupta, Joseph M. Karasinski, Xinwei Li | 2001-12-25 |
| 6299991 | Selective growth of ferromagnetic films for magnetic memory, storage-based devices | Nestor A. Bojarczuk, Peter Richard Duncombe, Arunava Gupta, Joseph M. Karasinski, Xinwei Li | 2001-10-09 |
| 6255671 | Metal embedded passivation layer structure for microelectronic interconnect formation, customization and repair | Nestor A. Bojarczuk, Arunava Gupta, Sampath Purushothaman | 2001-07-03 |
| 6210479 | Product and process for forming a semiconductor structure on a host substrate | Nestor A. Bojarczuk, Arunava Gupta | 2001-04-03 |
| 6146755 | High density magnetic recording medium utilizing selective growth of ferromagnetic material | Arunava Gupta | 2000-11-14 |
| 6120909 | Monolithic silicon-based nitride display device | Nestor A. Bojarczuk, Richard A. Haight | 2000-09-19 |
| 5898185 | Hybrid organic-inorganic semiconductor light emitting diodes | Nestor A. Bojarczuk, Richard A. Haight | 1999-04-27 |
| 5895932 | Hybrid organic-inorganic semiconductor light emitting diodes | Nestor A. Bojarczuk, Richard A. Haight | 1999-04-20 |
| 5879962 | III-V/II-VI Semiconductor interface fabrication method | James M. DePuydt, Michael A. Haase, Kwok-Keung Law, Thomas J. Miller, James M. Gaines +1 more | 1999-03-09 |
| 5874147 | Column III metal nitride films as phase change media for optical recording | Nestor A. Bojarczuk, Arunava Gupta, Wade Wai-Chung Tang | 1999-02-23 |
| 5739545 | Organic light emitting diodes having transparent cathode structures | Richard A. Haight, Joseph M. Karasinski, Ronald R. Troutman | 1998-04-14 |
| 5416337 | Hetero-superlattice PN junctions | Leroy L. Chang, Hiroo Munekata | 1995-05-16 |