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2013-10-15 |
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Eric D. Levinson, Ramnath Subramaniam |
2012-03-20 |
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Thin optical data storage media with hard coat |
David A. Bartizal |
2011-08-09 |
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William Albert Challener, William A. Tolbert |
2003-09-23 |
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Optical sensor having dielectric film stack |
William Albert Challener, William A. Tolbert |
2001-11-20 |
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II-VI laser diodes with short-period strained-layer superlattice quantum wells |
Hwa Cheng, Michael A. Haase, Jun Qiu |
2000-05-02 |
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Walter R. Eppler, Michael B. Hintz |
2000-02-29 |
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Michael A. Haase, Kwok-Keung Law, Thomas J. Miller, James M. Gaines, Supratik Guha +1 more |
1999-03-09 |
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Nang T. Tran, James C. Brown, Thomas J. Staiger, John C. Dahlquist, Meredith J. Williams |
1997-06-03 |
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Doping of IIB-VIA semiconductors during molecular beam epitaxy electromagnetic radiation transducer having p-type ZnSe layer |
Robert M. Park, Hwa Cheng, Michael A. Haase |
1996-11-12 |
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Michael A. Haase, Jun Qiu, Hwa Cheng |
1996-07-23 |
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Michael A. Haase, Hwa Cheng, Jun Qiu |
1996-04-30 |
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Michael A. Haase, Jun Qiu, Hwa Cheng |
1995-04-04 |
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Growth of II VI laser diodes with quantum wells by atomic layer epitaxy and migration enhanced epitaxy |
Hwa Cheng, Michael A. Haase, Jun Qiu |
1995-03-07 |
| 5396103 |
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Jun Oiu, Hwa Cheng, Michael A. Haase |
1995-03-07 |
| 5319219 |
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Hwa Cheng, Michael A. Haase, Jun Qiu |
1994-06-07 |
| 5291507 |
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Michael A. Haase, Hwa Cheng, Jun Qiu |
1994-03-01 |
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Ohmic contact for p-type group II-IV compound semiconductors |
Jun Qiu, Hwa Cheng, Michael A. Haase |
1993-12-28 |
| 5248631 |
Doping of IIB-VIA semiconductors during molecular beam epitaxy using neutral free radicals |
Robert M. Park, Hwa Cheng, Michael A. Haase |
1993-09-28 |
| 5213998 |
Method for making an ohmic contact for p-type group II-VI compound semiconductors |
Jun Qiu, Hwa Cheng, Michael A. Haase |
1993-05-25 |