Issued Patents All Time
Showing 1–14 of 14 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6057559 | II-VI laser diodes with short-period strained-layer superlattice quantum wells | James M. DePuydt, Michael A. Haase, Jun Qiu | 2000-05-02 |
| 5698168 | Unibody gas plasma source technology | Scott Wayne Priddy | 1997-12-16 |
| 5641595 | Manufacture of color filters by incremental exposure method | Pao-Ju Hsieh, Hsien-Kuang Lin, Jim-Chyuan Shieh, Chao Niu, Chao H. Tseng | 1997-06-24 |
| 5574296 | Doping of IIB-VIA semiconductors during molecular beam epitaxy electromagnetic radiation transducer having p-type ZnSe layer | Robert M. Park, James M. DePuydt, Michael A. Haase | 1996-11-12 |
| 5538918 | Method of fabricating a buried-ridge II-VI laser diode | Michael A. Haase, Jun Qiu, James M. DePuydt | 1996-07-23 |
| 5513199 | Blue-green laser diode | Michael A. Haase, James M. DePuydt, Jun Qiu | 1996-04-30 |
| 5404027 | Buried ridge II-VI laser diode | Michael A. Haase, Jun Qiu, James M. DePuydt | 1995-04-04 |
| 5396103 | Graded composition ohmic contact for P-type II-VI semiconductors | Jun Oiu, James M. DePuydt, Michael A. Haase | 1995-03-07 |
| 5395791 | Growth of II VI laser diodes with quantum wells by atomic layer epitaxy and migration enhanced epitaxy | James M. DePuydt, Michael A. Haase, Jun Qiu | 1995-03-07 |
| 5319219 | Single quantum well II-VI laser diode without cladding | James M. DePuydt, Michael A. Haase, Jun Qiu | 1994-06-07 |
| 5291507 | Blue-green laser diode | Michael A. Haase, James M. DePuydt, Jun Qiu | 1994-03-01 |
| 5274269 | Ohmic contact for p-type group II-IV compound semiconductors | James M. DePuydt, Jun Qiu, Michael A. Haase | 1993-12-28 |
| 5248631 | Doping of IIB-VIA semiconductors during molecular beam epitaxy using neutral free radicals | Robert M. Park, James M. DePuydt, Michael A. Haase | 1993-09-28 |
| 5213998 | Method for making an ohmic contact for p-type group II-VI compound semiconductors | Jun Qiu, Michael A. Haase, James M. DePuydt | 1993-05-25 |