| 6057559 |
II-VI laser diodes with short-period strained-layer superlattice quantum wells |
James M. DePuydt, Michael A. Haase, Jun Qiu |
2000-05-02 |
| 5698168 |
Unibody gas plasma source technology |
Scott Wayne Priddy |
1997-12-16 |
| 5641595 |
Manufacture of color filters by incremental exposure method |
Pao-Ju Hsieh, Hsien-Kuang Lin, Jim-Chyuan Shieh, Chao Niu, Chao H. Tseng |
1997-06-24 |
| 5574296 |
Doping of IIB-VIA semiconductors during molecular beam epitaxy electromagnetic radiation transducer having p-type ZnSe layer |
Robert M. Park, James M. DePuydt, Michael A. Haase |
1996-11-12 |
| 5538918 |
Method of fabricating a buried-ridge II-VI laser diode |
Michael A. Haase, Jun Qiu, James M. DePuydt |
1996-07-23 |
| 5513199 |
Blue-green laser diode |
Michael A. Haase, James M. DePuydt, Jun Qiu |
1996-04-30 |
| 5404027 |
Buried ridge II-VI laser diode |
Michael A. Haase, Jun Qiu, James M. DePuydt |
1995-04-04 |
| 5396103 |
Graded composition ohmic contact for P-type II-VI semiconductors |
Jun Oiu, James M. DePuydt, Michael A. Haase |
1995-03-07 |
| 5395791 |
Growth of II VI laser diodes with quantum wells by atomic layer epitaxy and migration enhanced epitaxy |
James M. DePuydt, Michael A. Haase, Jun Qiu |
1995-03-07 |
| 5319219 |
Single quantum well II-VI laser diode without cladding |
James M. DePuydt, Michael A. Haase, Jun Qiu |
1994-06-07 |
| 5291507 |
Blue-green laser diode |
Michael A. Haase, James M. DePuydt, Jun Qiu |
1994-03-01 |
| 5274269 |
Ohmic contact for p-type group II-IV compound semiconductors |
James M. DePuydt, Jun Qiu, Michael A. Haase |
1993-12-28 |
| 5248631 |
Doping of IIB-VIA semiconductors during molecular beam epitaxy using neutral free radicals |
Robert M. Park, James M. DePuydt, Michael A. Haase |
1993-09-28 |
| 5213998 |
Method for making an ohmic contact for p-type group II-VI compound semiconductors |
Jun Qiu, Michael A. Haase, James M. DePuydt |
1993-05-25 |
