Issued Patents All Time
Showing 26–50 of 197 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10818772 | Heterojunction bipolar transistors with an inverted crystalline boundary in the base layer | Vibhor Jain, Pernell Dongmo, Cameron E. Luce, James W. Adkisson | 2020-10-27 |
| 10804364 | Tunable breakdown voltage RF FET devices | Vibhor Jain, John J. Pekarik | 2020-10-13 |
| 10790369 | Tunable breakdown voltage RF FET devices | Vibhor Jain, John J. Pekarik | 2020-09-29 |
| 10784346 | Extrinsic base doping for bipolar junction transistors | Renata Camillo-Castillo, David L. Harame | 2020-09-22 |
| 10777668 | Bipolar junction transistors with a self-aligned emitter and base | Vibhor Jain, John J. Pekarik, Pernell Dongmo | 2020-09-15 |
| 10770557 | Tunable breakdown voltage RF FET devices | Vibhor Jain, John J. Pekarik | 2020-09-08 |
| 10692753 | Semiconductor structure with airgap | Mark D. Jaffe, Alvin J. Joseph, Anthony K. Stamper | 2020-06-23 |
| 10680074 | Tunable breakdown voltage RF FET devices | Vibhor Jain, John J. Pekarik | 2020-06-09 |
| 10629692 | Tunable breakdown voltage RF FET devices | Vibhor Jain, John J. Pekarik | 2020-04-21 |
| 10535551 | Lateral PiN diodes and schottky diodes | Natalie B. Feilchenfeld, Vibhor Jain | 2020-01-14 |
| 10439053 | Cascode heterojunction bipolar transistor | Vibhor Jain, Alvin J. Joseph | 2019-10-08 |
| 10431654 | Extrinsic base doping for bipolar junction transistors | Renata Camillo-Castillo, David L. Harame | 2019-10-01 |
| 10367084 | Cascode heterojunction bipolar transistors | Vibhor Jain, Alvin J. Joseph | 2019-07-30 |
| 10367083 | Compact device structures for a bipolar junction transistor | Vibhor Jain, Renata Camillo-Castillo, John J. Pekarik, Alvin J. Joseph, Peter B. Gray | 2019-07-30 |
| 10312356 | Heterojunction bipolar transistors with multiple emitter fingers and undercut extrinsic base regions | Vibhor Jain, James W. Adkisson, Sarah A. McTaggart, Mark D. Levy | 2019-06-04 |
| 10217852 | Heterojunction bipolar transistors with a controlled undercut formed beneath the extrinsic base | Vibhor Jain, James W. Adkisson, James R. Elliott | 2019-02-26 |
| 10211087 | Semiconductor structure with airgap | Mark D. Jaffe, Alvin J. Joseph, Anthony K. Stamper | 2019-02-19 |
| 10211324 | Vertical p-type, n-type, p-type (PNP) junction integrated circuit (IC) structure | Joseph R. Greco, Aaron L. Vallett, Robert F. Vatter | 2019-02-19 |
| 10170553 | Shaped terminals for a bipolar junction transistor | Renata Camillo-Castillo, John J. Pekarik | 2019-01-01 |
| 10163955 | Photodetector and method of forming the photodetector on stacked trench isolation regions | John J. Ellis-Monaghan, Steven M. Shank | 2018-12-25 |
| 10153361 | Heterojunction bipolar transistor device integration schemes on a same wafer | Renata Camillo-Castillo, Vibhor Jain, Anthony K. Stamper | 2018-12-11 |
| 10134880 | Self-aligned bipolar junction transistors with a base grown in a dielectric cavity | Vibhor Jain, Alvin J. Joseph, Pernell Dongmo | 2018-11-20 |
| 10121884 | Fabrication of integrated circuit structures for bipolar transistors | Vibhor Jain | 2018-11-06 |
| 10115810 | Heterojunction bipolar transistor with a thickened extrinsic base | Vibhor Jain, John J. Pekarik | 2018-10-30 |
| 10109716 | Turnable breakdown voltage RF FET devices | Vibhor Jain, John J. Pekarik | 2018-10-23 |